Ultra-Thin Interposer Without TSVs for Signal Leakage Reduction
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Solution Overview
Problem
Conventional semiconductor packages with through-semiconductor vias (TSVs) experience leakage and electrical coupling issues that adversely affect signal quality, particularly as devices become more sophisticated and compact.
Innovation Solution
A semiconductor package design utilizing an ultra-thin interposer without TSVs, using intra-interposer routing traces, micro-bumps, under-bump metallizations, and solder balls to connect active dies to a package substrate, eliminating the need for TSVs and reducing semiconductor leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-semiconductor vias (TSVs) are used to provide electrical connections between active semiconductor dies and package substrate, then electrical connectivity is achieved, but signal leakage and electrical coupling occur that degrade signal quality
Solution Approach 1:
The patent removes the semiconductor substrate from the interposer structure, extracting the harmful element that causes leakage. The interposer is reconfigured to use only dielectric material without any semiconductor substrate, thereby eliminating the source of signal leakage while maintaining electrical connectivity through alternative means (conductive vias filled with conductive material through the dielectric layer).
Solution Approach 2:
The patent introduces a dielectric layer as an intermediary material to replace the semiconductor substrate. This dielectric intermediary provides electrical isolation and prevents leakage while still allowing for conductive vias to establish necessary electrical connections, thus mediating between the need for connectivity and the need to prevent leakage.
2Reliability
If a conventional interposer with semiconductor substrate and TSVs is used, then electrical connections are established, but the package size increases and compact form factor is compromised
Solution Approach 1:
The patent changes the fundamental parameter of interposer composition by eliminating the semiconductor substrate and using only dielectric material. This parameter change allows for a thinner, more compact interposer structure that reduces overall package volume while maintaining all necessary electrical connection functions through the modified via structure.
3Strength
If semiconductor substrate is used in interposer, then structural support is provided, but leakage occurs that adversely affects electrical signals
Solution Approach 1:
The patent converts the harmful property of semiconductor material (which conducts electricity and causes leakage) into a beneficial dielectric material that provides both structural support and electrical isolation. The dielectric interposer structure transforms the problem of conductivity into a solution by using insulating material that naturally prevents leakage while maintaining mechanical strength.
Data Source
AI summary
There are disclosed herein various implementations of semiconductor packages including an interposer without through-semiconductor vias (TSVs). One exemplary implementation includes a first active die situated over an interposer. The interposer includes an interposer dielectric having intra-interposer routing traces. The first active die communicates electrical signals to a package substrate situated below the interposer utilizing the intra-interposer routing traces and without utilizing TSVs. In one implementation, the semiconductor package includes a second active die situated over the interposer, the second active die communicating electrical signals to the package substrate utilizing the intra-interposer routing traces and without utilizing TSVs. Moreover, in one implementation, the first active die and the second active die communicate chip-to-chip signals through the interposer.