Ultra-Thin Semiconductor Package With Metal Support for Low Impedance
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Solution Overview
Problem
Conventional semiconductor packages with thicker semiconductor substrates face challenges in reducing conduction impedance and maintaining mechanical strength, which affects battery performance and reliability.
Innovation Solution
A semiconductor package design with a semiconductor substrate thickness of 15-35 microns and a metal support of at least 30 microns, combined with a molding encapsulation that directly contacts the metal support's side and back surfaces, facilitating efficient saw blade cutting and maintaining mechanical integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the semiconductor substrate is reduced to decrease conduction impedance, then electrical performance is improved, but mechanical strength decreases
Solution Approach 1:
The patent employs a composite structure combining a thin semiconductor substrate (15-35 microns) with a thick metal support layer (at least 30 microns). This composite design allows the semiconductor substrate to be thin enough for low conduction impedance while the metal support provides the necessary mechanical strength and rigidity, resolving the contradiction between electrical performance and mechanical strength.
2Reliability
If the thickness of the semiconductor substrate is reduced to reduce DC resistance, then conduction impedance decreases, but mechanical strength and warpage control deteriorate
Solution Approach 1:
The metal support layer acts as a rigid backbone that compensates for the reduced stiffness of the thin semiconductor substrate. This composite structure maintains dimensional stability and controls warpage during manufacturing and operation, enabling the use of ultra-thin substrates without sacrificing structural integrity.
Solution Approach 2:
The patent applies different thickness characteristics to different parts of the structure: the semiconductor substrate is locally thinned to 15-35 microns for low conduction impedance, while the metal support is locally thickened to at least 30 microns for mechanical stability and warpage control, allowing each region to optimize its function.
3Reliability
If the thickness of the semiconductor substrate is reduced to improve electrical performance, then conduction impedance decreases, but manufacturing complexity increases
Solution Approach 1:
The metal support layer is formed on the back surface of the semiconductor substrate before final assembly steps. This preliminary action provides mechanical reinforcement early in the manufacturing process, enabling subsequent handling and processing of the thin substrate without excessive complexity or risk of damage.
Data Source
AI summary
A semiconductor package comprises a semiconductor substrate, a plurality of contact pads, a seed layer, a metal support, and a molding encapsulation. A thickness of the semiconductor substrate is in a range from 15 microns to 35 microns. A thickness of the metal support is at least 30 microns. A method comprises the steps of providing a device wafer; attaching a carrier; applying a thinning process; forming a seed layer; forming a plurality of metal supports; forming a molding encapsulation; and applying a singulation process. The molding encapsulation directly contacts a plurality of side surfaces and a back surface of the metal support to facilitate efficient saw blade cutting.