Ultra-Thin IC Packaging With Vertical Sidewall Contact
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Solution Overview
Problem
The fragility of ultra-thin semiconductor wafers during packaging processes leads to yield issues and increased manufacturing costs, as they are prone to damage during handling and assembly, necessitating the over-production of devices to meet demand.
Innovation Solution
An integrated circuit packaging system with a vertical sidewall contact is developed, involving a semiconductor wafer with a support layer over solder bumps, allowing for back-grinding and singulation without damaging the wafers, and mounting the ultra-thin stack on a substrate for improved handling and connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If ultra-thin semiconductor wafers are used to reduce package size and improve performance, then device miniaturization and interconnect speed are improved, but wafer fragility and handling difficulty increase
Solution Approach 1:
A support layer is formed over the active side of the ultra-thin wafer before subsequent processing steps. This support layer acts as a cushioning structure that prevents wafer breakage during handling, singulation, and assembly operations, enabling the use of ultra-thin wafers without compromising structural integrity
Solution Approach 2:
The support layer serves as an intermediary element between the ultra-thin wafer and the external handling environment. It provides mechanical support during critical operations while allowing the ultra-thin wafer to maintain its electrical and functional properties, effectively mediating between the need for thinness and the need for handleability
2Productivity
If ultra-thin wafers are processed through conventional singulation and assembly, then device separation is achieved, but yield losses increase due to wafer damage
Solution Approach 1:
The support layer is formed before singulation and assembly operations, providing continuous protection throughout the manufacturing process. This prevents stress-induced breakage during die separation and interconnect formation, significantly reducing yield losses from wafer damage
Solution Approach 2:
The support layer is established in advance before any potentially damaging operations occur. This preliminary protective measure ensures that subsequent singulation and assembly steps can be performed without risking wafer integrity, thereby preserving device yield
3Quantity of substance
If additional devices are over-manufactured to compensate for yield losses, then demand is met, but manufacturing costs increase
Solution Approach 1:
The support layer, which adds complexity to the manufacturing process, converts the harmful effect of wafer fragility into a benefit by enabling higher yields. Although the support layer requires additional processing steps, the reduction in yield losses and elimination of over-manufacturing needs results in lower overall manufacturing costs
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the handling and assembly of ultra-thin wafers, reduces yield losses, and enables shorter interconnects and package sizes, aligning with the trend of shrinking devices while maintaining performance and reducing costs.
Implementation Method 1
forming a solder bump on the active side of the semiconductor wafer
Data Source
AI summary
An integrated circuit packaging system with ultra-thin die is provided including providing an ultra-thin integrated circuit stack, having a vertical sidewall contact, including providing a semiconductor wafer having an active side, forming a solder bump on the active side of the semiconductor wafer, forming a support layer over the solder bump and the active side of the semiconductor wafer, forming an ultra-thin wafer from the semiconductor wafer and singulating the ultra-thin integrated circuit stack for exposing the vertical sidewall contact, mounting the ultra-thin integrated circuit stack on a substrate, and coupling the substrate to the vertical sidewall contact.