Ultrasonic Transducer Layer Thickness Tuning to Reduce Sidelobes

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Solution Overview

Problem

Existing ultrasonic transducer devices suffer from sidelobe effects that degrade image quality, necessitating improvements in the arrangement and thickness of piezoelectric materials to enhance ultrasonic signal emission and reception.

Innovation Solution

The ultrasonic transducer device features a substrate with ultrasonic oscillation units arranged along an axial direction, covered by an upper insulating layer with a film thickness that varies from the central region to the lateral sides, enhancing resonant frequencies and reducing sidelobe effects through a manufacturing process involving film deposition, lithography, and etching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the thickness of the piezoelectric material is changed to inhibit sidelobe effect, then the ultrasonic signal quality is improved, but the device complexity increases

Engineering Contradiction:
Improveultrasonic signal qualityVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality by varying the thickness of the upper insulating layer across different regions of the ultrasonic oscillation piece. The thickness changes from a first value at the central region to a second value at lateral regions, creating localized property variations that control ultrasonic wave emission patterns and inhibit sidelobe effects without requiring complete redesign of the entire device structure.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If the arrangement of elements is changed to improve ultrasonic signal emission, then the image quality is improved, but the manufacturing precision requirements increase

Engineering Contradiction:
Improveimage qualityVSAvoidmanufacturing precision
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent employs parameter changes by systematically varying the thickness parameter of the upper insulating layer across the ultrasonic oscillation piece. This continuous parameter variation allows control over ultrasonic signal emission characteristics and element arrangement effects, achieving improved image quality through gradual thickness transitions rather than discrete structural changes that would demand higher manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution increases bandwidth and improves image resolution by 30% with better contrast strength, sharpness, and color saturation, effectively mitigating sidelobe effects and enhancing image quality.

Implementation Method 1

the ultrasonic oscillation piece includes a plurality of ultrasonic oscillation units arranged along an axial direction and configured to emit a set of ultrasonic waves, wherein the set of ultrasonic waves has a set of resonant frequencies

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

The upper insulating layer has a film thickness positively related to the set of resonant frequencies

Methodology Applied
Scientific EffectResonance: Resonance

Data Source

PatentUS20260047821A1Manufacturing method of ultrasonic transducer device
Publication Date: 2026.02.19 QISDA CORP
  • US20260047821A1 patent drawing
  • US20260047821A1 patent drawing
  • US20260047821A1 patent drawing

AI summary

An ultrasonic transducer device and a manufacturing method thereof are provided. The ultrasonic transducer device includes a substrate, an ultrasonic oscillation unit and an upper insulating layer. The ultrasonic oscillation unit is disposed on the substrate and configured to emit or receive an ultrasonic wave. The ultrasonic wave has a resonant frequency. The upper insulating layer covers the ultrasonic oscillation unit. The upper insulating layer has a film thickness positively related to the resonant frequency.