Ultrasonic Probe Layout for Multi-Position Semiconductor Defect Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor device testing methods are inadequate for accurately detecting defects such as voids, cracks, and delamination without damaging the device, and they struggle to identify multiple defects at different positions within a single test process.
Innovation Solution
A semiconductor device testing apparatus utilizing ultrasonic waves to non-destructively examine defects by transmitting and receiving ultrasonic waves through strategically positioned apertures and probes, allowing for the detection of defects at various positions on a substrate without cutting the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional testing methods are used to detect defects, then the testing process can be performed, but the accuracy of defect detection is insufficient and multiple defects at different positions cannot be identified
Solution Approach 1:
The substrate surface is divided into multiple regions with different aperture positions. By segmenting the detection area and using multiple apertures at different locations, the system can detect defects at various positions independently, thereby improving both detection accuracy and the ability to identify multiple defects simultaneously.
Solution Approach 2:
The invention transitions from a single-point detection method to a multi-dimensional detection approach by positioning apertures at different locations on the substrate surface. This spatial dimensionality enhancement allows simultaneous detection of defects at multiple positions, resolving the limitation of identifying only single defects.
2Adaptability or versatility
If a single ultrasonic probe is used for testing, then the device complexity is reduced, but the ability to detect multiple defects at different positions is limited
Solution Approach 1:
Multiple apertures are designed with identical structures and functions, each capable of performing the same ultrasonic detection task. This universality allows the system to detect defects at multiple positions using standardized components, enhancing versatility while maintaining manageable complexity through repetition of proven designs.
3Measurement precision
If multiple apertures and probes are used to detect defects at several positions, then the defect detection capability is improved, but the device complexity increases
Solution Approach 1:
The aperture serves as an intermediary structure that simplifies the overall system design. Instead of requiring multiple complex probe assemblies, the aperture provides a standardized interface for ultrasonic wave transmission and reception, reducing device complexity while enabling multi-position defect detection through strategic positioning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate detection of defect positions and types without damaging the semiconductor device, allowing for efficient identification and potential exclusion of defective devices from production.
Implementation Method 1
transmitting an ultrasonic wave to the substrate
Implementation Method 2
receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate
Data Source
AI summary
A method of fabricating a semiconductor device may include disposing a first aperture on a surface of a substrate; positioning a first ultrasonic wave receiving probe on the surface of the substrate in the first aperture; disposing a second aperture on the surface of the substrate; positioning a second ultrasonic wave receiving probe on the surface of the substrate in the second aperture; transmitting an ultrasonic wave to the substrate; and receiving a reflection ultrasonic wave, which is reflected by a portion in the substrate. The receiving of the reflection ultrasonic wave comprises one of: receiving the reflection ultrasonic wave, which is transmitted through the first aperture, using the first ultrasonic wave receiving probe positioned on the surface of the substrate; and receiving the reflection ultrasonic wave, which is transmitted through the second aperture, using the second ultrasonic wave receiving probe positioned on the surface of the substrate. The first ultrasonic wave receiving probe and the second ultrasonic wave receiving probe are spaced apart from each other in a horizontal direction.


