Ultrathin Solid-State Die Support Structure for Light and Heat

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Solution Overview

Problem

The existing methods for manufacturing solid state transducer (SST) dies, such as LEDs, are capital intensive due to the complete removal of the growth substrate, which adds time and material costs, and the use of separate support substrates can damage the device and increase thickness, while optically transmissive substrates like sapphire are expensive and induce stress.

Innovation Solution

The use of engineered substrates where the growth substrate itself forms a support structure after partial removal, eliminating the need for a separate support substrate and reducing material costs, and incorporating a conductive material for improved thermal dissipation and stress management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the growth substrate is completely removed to improve optical properties, then light emission is improved, but the process becomes capital intensive and time-consuming

Engineering Contradiction:
Improvelight emissionVSAvoidmanufacturing time
Core Design Contradiction:
Illumination intensityVSLoss of time

Solution Approach 1:

The patent extracts only the necessary portions of the growth substrate to create openings for light emission, rather than completely removing the substrate. This selective extraction maintains the substrate's structural support function while enabling optical performance, thereby improving light emission without incurring the full time and cost penalties of complete substrate removal.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The growth substrate serves multiple functions simultaneously: it provides structural support for the delicate epitaxial layers and enables light emission through selectively removed portions. This multi-functionality eliminates the need for separate support substrates and complete substrate removal processes, reducing manufacturing time and costs while maintaining optical properties.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Strength

If a separate support substrate is attached to support the epitaxial layers, then structural support is improved, but device thickness increases and the process becomes more costly

Engineering Contradiction:
Improvestructural supportVSAvoiddevice thickness
Core Design Contradiction:
StrengthVSLength of stationary object

Solution Approach 1:

The growth substrate is designed to serve dual purposes: providing structural support for the epitaxial layers and acting as the final support structure in the device. By maintaining the substrate rather than removing it completely or attaching separate support substrates, the patent eliminates additional thickness from support substrates while ensuring adequate structural support through the substrate's inherent mechanical properties.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the functions of the growth substrate and support substrate into a single integrated structure. The growth substrate itself is engineered to provide the necessary mechanical support, eliminating the need for separate support substrate attachment processes. This integration reduces device thickness and simplifies the manufacturing process, avoiding the costs and complexity of bonding additional layers.

Inventive Principle:
Principle #5Merging (Combining)

3Illumination intensity

If optically transmissive substrates like sapphire are used, then optical performance is improved, but material costs increase and stress is induced

Engineering Contradiction:
Improveoptical performanceVSAvoidmaterial cost
Core Design Contradiction:
Illumination intensityVSQuantity of substance

Solution Approach 1:

The patent applies local quality by selectively removing portions of the growth substrate only where light emission is required, rather than using expensive optically transmissive materials throughout the entire substrate. This localized approach to optical performance maintains light emission capabilities in critical areas while using cost-effective substrate materials elsewhere, thereby improving optical performance without proportionally increasing material costs.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the physical state and configuration of the growth substrate through selective removal to create optically functional regions. By modifying the substrate's structure (creating openings or thin regions) rather than changing its material composition to expensive transmissive materials like sapphire, the patent achieves optical performance while controlling material costs and avoiding stress induction from material mismatches.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces material and production costs, minimizes device thickness, and enhances thermal properties by allowing efficient heat dissipation while maintaining optical performance without the need for additional support structures.

Implementation Method 1

incorporating a conductive material for improved thermal dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11901487B2Ultrathin solid state dies and methods of manufacturing the same
Publication Date: 2024.02.13 MICRON TECHNOLOGY INC
  • US11901487B2 patent drawing
  • US11901487B2 patent drawing
  • US11901487B2 patent drawing

AI summary

Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.