Ultrathin LED With DBR Insulating Layer
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Solution Overview
Problem
Conventional light emitting diodes face challenges in achieving ultrathin pixel sizes due to the thickness of growth substrates or metal supports, which hinder the development of efficient and compact light emitting structures.
Innovation Solution
The design eliminates the growth substrate or metal support by incorporating a light emitting structure with a first and second conductive semiconductor layer, an active layer, and an insulating layer with a DBR structure, where the first electrode is disposed on the first conductive semiconductor layer and the second electrode is positioned on the second conductive semiconductor layer, enhancing light reflection and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a growth substrate or metal support is used in conventional light emitting diodes, then structural stability is maintained, but the device thickness increases and ultrathin pixel realization becomes difficult
Solution Approach 1:
The patent extracts and removes the growth substrate or metal support from the light emitting diode structure. By eliminating these thick supporting components, the device achieves ultrathin dimensions while maintaining functionality through alternative structural design where the light emitting structure itself serves as the primary support.
Solution Approach 2:
The patent employs thin-film structures throughout the light emitting diode, with the light emitting structure grown as a thin layer that replaces traditional thick substrates. This thin-film approach enables ultrathin pixel realization while maintaining the necessary structural integrity through careful material selection and layer design.
2Length of moving object
If the light emitting structure thickness is reduced to achieve ultrathin pixels, then device compactness improves, but manufacturing difficulty increases due to the removal of traditional substrates
Solution Approach 1:
The patent segments the light emitting structure into distinct functional layers (n-type semiconductor layer, active layer, p-type semiconductor layer) that can be grown and processed independently. This segmentation allows for precise control of each layer's thickness and properties, facilitating ultrathin pixel manufacturing without excessive difficulty.
Solution Approach 2:
The patent changes the growth parameters and material composition parameters to enable the formation of ultrathin light emitting structures. By optimizing these parameters, the device achieves reduced thickness while maintaining manufacturability through controlled growth processes that ensure consistent quality without requiring traditional thick substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light emitting efficiency by reflecting emitted light and prevents light leakage, allowing for the creation of ultrathin light emitting diodes and arrays suitable for various applications, including flexible wearable devices.
Implementation Method 1
an insulating layer disposed on the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer, the insulating layer having a DBR structure
Data Source
Figure 1~2
Figure 3~4
Figure 5A~5B
AI summary
Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.