Under Layer Composition for Semiconductor Device
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing tri-layer lithography processes face challenges in removing the carbon-containing under layer without damaging the dielectric layer beneath, which affects device reliability due to the difficulty in using dry etching methods.
Innovation Solution
A novel under layer composition is introduced, comprising a polymeric material and a cross-linker with a decomposable functional group that allows for effective removal by a mild wet etching process under pH 4–10 conditions, preventing damage to the underlying material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If dry etching process is applied to remove the carbon-containing under layer, then the under layer can be removed, but the dielectric layer therebeneath is damaged
Solution Approach 1:
The patent changes the chemical composition parameters of the under layer by incorporating specific functional groups (carboxyl, hydroxyl, amine, or ether groups) that enable selective removal. This allows the under layer to be removed via wet etching or oxygen plasma at controlled temperatures (200-400°C) without damaging the dielectric layer, resolving the contradiction between effective removal and device reliability
Solution Approach 2:
The patent creates a composite under layer structure combining a polymer matrix with specific functional groups that provide both structural integrity during processing and selective removability. The functional groups act as chemical handles for selective etching, enabling differentiation between the under layer and the dielectric layer beneath, thus allowing removal without damage
2Adaptability or versatility
If the carbon-containing under layer is formed over a dielectric layer, then the under layer provides necessary functions, but the removal process damages the dielectric layer
Solution Approach 1:
The patent introduces local chemical differentiation by incorporating specific functional groups at controlled concentrations (0.1-10% by weight) within the under layer polymer matrix. This creates localized chemical reactivity that enables selective removal of the under layer while leaving the dielectric layer intact, as the functional groups provide specific chemical affinity for etchants that do not affect the dielectric material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the removal of the under layer without damaging the dielectric layer, enhancing semiconductor device reliability by using a mild wet solution to decrosslink and remove the under layer, thereby improving the patterning process in semiconductor manufacturing.
Implementation Method 1
the cross-linker includes at least one decomposable functional group capable of being decomposed under a condition of pH 4～10
Data Source
AI summary
Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.