Semiconductor Package Underfill Layout for Reduced 3DIC Height
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Solution Overview
Problem
The semiconductor industry faces challenges with 3DICs due to creeping underfill material and height restrictions of ball grid arrays, which can lead to increased thickness and potential damage to integrated passive devices.
Innovation Solution
A semiconductor structure is designed with a redistribution structure and underfill material that extends along the side wall of an integrated passive device without creeping onto its bottom surface, allowing for reduced height and thickness by forming a flat end surface of the underfill material, and conductive components like BGA or C4 bumps can be used to support the main logic board without crushing the IPD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If underfill material is formed between IPD and fan-out package, then structural support and adhesion are improved, but underfill material creeps along side wall and onto bottom surface of IPD, increasing total thickness
Solution Approach 1:
The patent extracts the harmful creeping portion of the underfill material from the bottom surface of the IPD through a removal process. This separates the beneficial underfill (providing support and adhesion) from the harmful excess (increasing thickness), resolving the contradiction between structural support and total thickness control
Solution Approach 2:
The patent discards the creeping portion of the underfill material that extends beyond the IPD side wall onto the bottom surface. By removing this excess material, the patent prevents thickness increase while maintaining the necessary structural support and adhesion functions of the underfill material in its proper location
2Strength
If BGA height is increased to support main logic board, then support function is improved, but overall height of semiconductor structure increases
Solution Approach 1:
The patent extracts the creeping underfill material that would otherwise add to the overall height. By removing this excess material, the patent enables the use of lower-profile BGA components that can provide necessary support function without increasing the overall semiconductor structure height
Solution Approach 2:
The patent changes the height parameter of the BGA component by enabling the use of lower-height BGAs. This is made possible because the removal of creeping underfill material creates sufficient clearance, allowing the BGA to provide support function while maintaining a reduced overall height specification
3Productivity
If integration density is increased by reducing minimum feature size, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent extracts the problematic creeping underfill material that creates variability in final dimensions. By removing this uncontrolled material extension, the patent reduces dimensional variability and improves manufacturing precision, enabling higher integration density with tighter feature size controls
Data Source
AI summary
A semiconductor structure includes a package, an electrical device and an underfill material. The package includes a redistribution structure and at least one die, and the at least one die is disposed on a first side of the redistribution structure. The electrical device is disposed on a second side of the redistribution structure, the electrical device has a top surface and a bottom surface opposite to each other, and the top surface faces the redistribution structure. The underfill material is disposed between the top surface and the redistribution structure and extending toward the bottom surface, the underfill material has an end surface corresponding to the bottom surface, and the end surface is a flat surface. In addition, a manufacturing method of the semiconductor structure is also provided.