Underlayer Film Composition for EUV Resist Pattern Rectangularity
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to form underlayer films for metal-containing resist patterns that exhibit excellent pattern rectangularity and minimize trailing and development residues during exposure to extreme ultraviolet rays.
Innovation Solution
The use of a polysiloxane or polycarbosilane compound with specific structural units in the underlayer film-forming composition, which includes a hydrophobic aliphatic hydrocarbon group, allows for the formation of an underlayer film that suppresses resist pattern trailing and facilitates easy removal of development residues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional underlayer films are used for metal-containing resist patterns, then the manufacturing process is simple, but pattern rectangularity is poor and trailing occurs during development
Solution Approach 1:
The patent modifies the chemical composition parameters of the underlayer film by incorporating specific structural units (α-1 and α-2) with hydrophobic aliphatic hydrocarbon groups. This parameter change in the molecular structure enables the underlayer film to suppress trailing and improve pattern rectangularity during EUV lithography development processes.
Solution Approach 2:
The underlayer film is formulated as a composite material containing polysiloxane or polycarbosilane compounds with specific structural units. This composite structure combines the benefits of silicon-containing films with hydrophobic characteristics, achieving both excellent pattern rectangularity and resistance to trailing effects during development.
2Reliability
If conventional underlayer films are used, then the process is straightforward, but development residues remain on the substrate
Solution Approach 1:
The patent changes the chemical parameters of the underlayer film by introducing structural units with hydrophobic aliphatic hydrocarbon groups. This modification alters the film's interaction with development solutions, enabling complete removal of development residues while maintaining a relatively simple manufacturing process.
3Manufacturing precision
If metal-containing resist is used for high precision patterning, then pattern resolution improves, but trailing and rectangularity issues worsen
Solution Approach 1:
The patent introduces a specially designed underlayer film as an intermediary between the substrate and the metal-containing resist. This intermediary layer with hydrophobic structural units mediates the interaction between the resist and development solution, preventing trailing effects and maintaining excellent pattern rectangularity while preserving the high resolution capabilities of metal-containing resists.
Data Source
AI summary
A method for manufacturing a semiconductor substrate, includes: applying an underlayer film-forming composition directly or indirectly to a substrate to form an underlayer film; applying a composition for forming a metal-containing resist film to the underlayer film to form a metal-containing resist film; exposing the metal-containing resist film to extreme ultraviolet rays; and developing the exposed metal-containing resist film. The underlayer film-forming composition includes: a compound including at least one structural unit selected from the group consisting of a structural unit (α-1) represented by formula (1-1) and a structural unit (α-2) represented by formula (1-2). X is a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or a monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms substituted with at least one halogen atom. Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom.