Underwater Radiation Monitoring via Distributed Semiconductor Sensor Network

The patent replaces the complex high-vacuum photomultiplier sensor with a semiconductor sensor that copies the radiation detection function using solid-state physics principles. The semiconductor sensor achieves comparable measurement precision through direct charge carrier generation by radiation, eliminating the need for vacuum tubes and photomultiplier components, thus reducing device complexity while maintaining measurement accuracy.

The patent substitutes the mechanical/electronic vacuum photomultiplier system with a solid-state semiconductor detection system. The semiconductor sensor uses electrical field effects and charge carrier dynamics instead of vacuum tube electron multiplication, replacing a complex mechanical-electronic system with a simpler solid-state device that is more robust and less vulnerable to external impacts.

The patent uses a semiconductor sensor that copies the radiation detection function of photomultipliers but achieves it in a compact form factor. The semiconductor material directly converts radiation energy into electrical signals through charge carrier generation, eliminating the need for large vacuum tube structures and associated support systems, thereby significantly reducing sensor volume while maintaining detection capability.

The patent changes the fundamental detection parameter from optical photon multiplication in vacuum (photomultiplier) to direct charge carrier generation in solid-state (semiconductor). This parameter change enables miniaturization because semiconductor materials can be fabricated in small integrated circuits or detector elements that maintain high detection efficiency in a much smaller volume than vacuum photomultiplier tubes.

The patent replaces the high-voltage electron multiplication mechanism of photomultipliers with a low-voltage charge carrier collection mechanism in semiconductors. Radiation creates electron-hole pairs in the semiconductor that are collected by small electric fields, eliminating the need for kilovolt-level acceleration potentials. This substitution dramatically reduces power consumption while maintaining measurement accuracy through direct signal generation.

The patent changes the operating voltage parameter from kilovolt range (photomultiplier) to volt or sub-volt range (semiconductor). The semiconductor sensor operates with small bias voltages sufficient to collect charge carriers drift toward electrodes, replacing the high-voltage electron dynamics of photomultipliers with low-voltage charge transport, thereby reducing energy consumption while preserving detection sensitivity and measurement accuracy.

The patent divides the radiation monitoring function into multiple distributed semiconductor sensors instead of using a single sensor. Each sensor maintains simple individual operation, but collectively they cover a much larger spatial area. The segmentation principle allows the system to extend measurement range from 30 cm radius to multiple meters or kilometers by deploying sensors across the measurement area, while each sensor remains simple and low-power.

The patent transitions from single-point measurement (0D) to distributed spatial measurement (2D or 3D). By arranging multiple sensors in spatial configurations such as arrays, networks, or three-dimensional distributions, the system measures radiation across extended areas and volumes. This dimensional expansion allows comprehensive coverage of large regions while maintaining simplicity at the individual sensor level.