Uniform NiSi Deposition Using Metastable Reactive Layers

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Solution Overview

Problem

Laser-based annealing processes in semiconductor manufacturing result in non-uniform conductive layers with varying stoichiometries, leading to issues like carbon contamination, cracking, and interface failures in semiconductor devices.

Innovation Solution

Utilizing metastable reactive layers, such as nano-thermites, to catalyze a controlled exothermic reaction for uniform silicide layer formation, reducing excessive heat exposure and enhancing metallization structure consistency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If laser-based annealing processes are used to form conductive layers, then the manufacturing speed and productivity are improved, but the uniformity of the conductive layers deteriorates leading to varying stoichiometries

Engineering Contradiction:

Improvemanufacturing speedVSAvoiduniformity of conductive layers

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

A nickel silicide layer is introduced as an intermediary between the aluminum metallization layer and the semiconductor substrate. This intermediate layer acts as a buffer that reduces the thermal impact during annealing processes, preventing direct thermal stress on the aluminum layer and thereby improving uniformity while maintaining manufacturing speed

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the annealing parameters by using lower temperatures and shorter durations compared to conventional laser-based annealing. This parameter change allows the nickel silicide layer to form uniformly without causing excessive heat exposure that would lead to non-uniform stoichiometry in the conductive layers

Inventive Principle:

Principle #35Parameter changes

2Productivity

If high energy laser annealing is applied to form conductive layers quickly, then productivity is improved, but manufacturing defects such as cracking and interface failures increase

Engineering Contradiction:

Improveformation speed of conductive layersVSAvoidinterface stability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The nickel silicide layer is deposited beforehand as a protective cushion between the aluminum metallization and the semiconductor substrate. This pre-formed layer absorbs and distributes thermal stress during subsequent annealing processes, preventing cracking and interface failures that would otherwise occur due to rapid high-energy laser heating

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves uniform and consistent metallization structures with controlled electrical and thermomechanical properties, minimizing manufacturing defects like cracking and interface failures.

Implementation Method 1

applying energy to the metastable reactive layer to form a silicide layer on the semiconductor structure

Methodology Applied

Scientific EffectExothermic reaction: Exothermic Reaction

Data Source

PatentUS20250316486A1Method of Uniform NiSi Deposition

Publication Date: 2025.10.09 WOLFSPEED INC

AI summary

Semiconductor device packages and methods for manufacturing the same are provided. In one example, a semiconductor structure may be provided on a substrate, and a metastable reactive layer may be provided on the semiconductor structure. Energy may be applied to the metastable reactive layer to form a silicide layer on the semiconductor structure, and, in some examples, a metallization structure may be provided on the silicide layer.