Uniform OPC Bias for Repetitive Semiconductor Patterns
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Solution Overview
Problem
In semiconductor manufacturing, the optical proximity effect causes distortions in pattern shapes due to light diffraction and interference, leading to dimensional changes during photolithography, which existing methods struggle to accurately correct, especially in complex integrated circuit designs.
Innovation Solution
The method involves dividing the design pattern layout into repetitive and non-repetitive pattern parts, obtaining an optical proximity correction (OPC) bias from an extracted portion of the repetitive pattern, applying it uniformly to all similar portions, and performing OPC operations on non-repetitive parts to form corrected layouts, which are then merged to create a photomask.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional OPC operations are performed on all portions of the design pattern layout, then pattern shape accuracy is improved, but processing time and computational complexity increase significantly
Solution Approach 1:
The design pattern layout is divided into repetitive pattern portions and non-repetitive pattern portions. OPC operations are selectively applied only to non-repetitive portions, while repetitive portions are corrected by referencing the OPC results from representative samples. This segmentation reduces the overall processing time while maintaining pattern shape accuracy.
Solution Approach 2:
OPC correction results obtained from representative repetitive pattern portions are copied and applied to all other portions with identical patterns. This eliminates redundant calculations and significantly reduces processing time while ensuring consistent correction across all repetitive features.
2Reliability
If OPC operations are performed on all portions of the design pattern layout, then correction completeness is improved, but device complexity and processing resources increase
Solution Approach 1:
The layout is segmented into repetitive and non-repetitive portions, allowing the OPC system to apply different processing strategies to each segment. This reduces the overall computational complexity while ensuring that all portions receive appropriate correction.
Solution Approach 2:
A unified OPC processing framework is implemented that can handle both repetitive and non-repetitive patterns through a single system. The system automatically identifies pattern types and applies the appropriate correction method, simplifying the overall process complexity.
3Stability of the object's composition
If uniform OPC bias is applied to all repetitive pattern portions, then pattern uniformity is improved, but adaptability to local variations decreases
Solution Approach 1:
The system segments patterns into repetitive and non-repetitive categories, applying uniform OPC bias to repetitive portions to ensure consistency, while allowing customized OPC operations on non-repetitive portions to handle local variations appropriately.
Solution Approach 2:
Different OPC strategies are applied to different portions of the layout based on their characteristics. Repetitive portions receive uniform correction for consistency, while non-repetitive portions receive localized customized correction to address specific local variations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the time and complexity of OPC operations, ensures pattern uniformity, and prevents shape distortions, enabling more accurate and efficient semiconductor device manufacturing by focusing corrections on specific pattern types.
Implementation Method 1
a pattern may be distorted due to diffraction of the light, interference of the light
Implementation Method 2
a pattern may be distorted due to diffraction of the light, interference of the light
Data Source
AI summary
A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.


