Unilaterally Extended Gate Layout for Leakage-Resistant Semiconductors
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Solution Overview
Problem
As semiconductor devices decrease in size, the spacing between electronic devices/components also decreases, leading to increased resistance to leakage current, which poses a challenge in maintaining the integrity of semiconductor devices.
Innovation Solution
The implementation of a trimmed-gates region in semiconductor devices, where additional cut-patterns are included adjacent to flyover intersections to eliminate the extension of gate electrodes, thereby increasing the gap between active regions and neighboring structures, which enhances resistance to leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the spacing between electronic devices/components is decreased to reduce device size, then device integration density is improved, but resistance to leakage current between neighboring components deteriorates
Solution Approach 1:
The gate electrode is segmented into multiple portions with different extension characteristics. Some portions extend unilaterally beyond the active region while others extend bilaterally, creating distinct functional zones that address both leakage prevention and connectivity requirements
Solution Approach 2:
Different regions of the gate electrode are given different properties: regions adjacent to gaps have trimmed extensions to reduce leakage, while regions at functional intersections maintain full extensions to ensure proper electrical connection. This local differentiation resolves the contradiction between leakage resistance and device functionality
2Reliability
If gate electrodes are extended to ensure functional connectivity at intersections, then electrical connection is improved, but leakage current between active regions increases
Solution Approach 1:
The gate electrode structure is divided into segments with different extension behaviors. At functional intersections, the gate extends bilaterally to ensure connectivity, while at gap regions it extends unilaterally or is trimmed to prevent leakage, allowing both requirements to coexist
Solution Approach 2:
Instead of uniformly extending the gate electrode to ensure connectivity and then trying to reduce leakage, the approach inverts the logic by selectively trimming extensions at gap regions while maintaining full extensions only where functionally required. This inverted approach prioritizes leakage prevention while preserving necessary connectivity
Data Source
AI summary
A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.