Unipolar Complementary Logic Using Ferroelectric Transistors

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Solution Overview

Problem

The challenge in fabricating digital circuits is the requirement for both n-type and p-type transistors in complementary logic, which increases manufacturing cost and complexity.

Innovation Solution

The integration of ferroelectric field effect transistors with channels of a first polarity, combined with simple field effect transistors of the same polarity, to form logic gates and memory cells, eliminating the need for both n-type and p-type transistors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If both n-type and p-type transistors are integrated together in the same flow to implement complementary logic, then the logic functionality is achieved, but the manufacturing cost and complexity increase

Engineering Contradiction:
Improvelogic functionalityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the need for one type of transistor (either n-type or p-type) from the complementary logic circuit. By using only a single polarity of transistors (unipolar configuration), the manufacturing process is simplified while maintaining the essential logic functionality through alternative circuit design approaches.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the fundamental parameter of transistor polarity from dual-type (n-type and p-type) to single-type (unipolar). This parameter change allows the circuit to maintain logic functionality while simplifying the manufacturing process, as only one type of transistor needs to be fabricated and integrated.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If both n-type and p-type transistors are integrated together in the same flow, then complementary logic is achieved, but the manufacturing cost increases

Engineering Contradiction:
Improvelogic functionalityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent removes the requirement for one transistor type from the fabrication process. By implementing logic circuits with only n-type or only p-type transistors, the manufacturing cost is reduced as fewer different transistor types need to be produced and integrated in the same fabrication flow.

Inventive Principle:
Principle #2Taking out (Extraction)

3Device complexity

If unipolar transistors are used to reduce manufacturing complexity, then the manufacturing process is simplified, but the functionality must be maintained through alternative circuit design

Engineering Contradiction:
Improvemanufacturing complexityVSAvoidcircuit design flexibility
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent fundamentally changes the transistor polarity parameter from dual-type to single-type, which simplifies manufacturing. To compensate and maintain functionality, the circuit topology and design approach must be adapted, demonstrating the trade-off between manufacturing simplicity and design flexibility.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces manufacturing complexity and cost by enabling the creation of functional logic gates and memory cells using only transistors with the same polarity, while maintaining the functionality of CMOS logic.

Implementation Method 1

Ferroelectric field effect transistors having channels of a first polarity, are combined, in circuits, with simple field effect transistors having channels of the same polarity

Methodology Applied
Scientific EffectFerroelectricity:

Data Source

PatentUS10153368B2Unipolar complementary logic
Publication Date: 2018.12.11 SAMSUNG ELECTRONICS CO LTD
  • US10153368B2 patent drawing
  • US10153368B2 patent drawing
  • US10153368B2 patent drawing

AI summary

A system of unipolar digital logic. Ferroelectric field effect transistors having channels of a first polarity, are combined, in circuits, with simple field effect transistors having channels of the same polarity, to form logic gates and/or memory cells.