Up-conversion IR Sensor with Lattice-matched Rare Earth Oxide

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Solution Overview

Problem

Infrared radiation sensors using rare earth oxides for up-conversion are costly and difficult to manufacture, and existing technologies lack the ability to efficiently adjust for maximum efficiency at specific IR frequencies.

Innovation Solution

A pumped sensor system is developed using a single crystal silicon substrate with epitaxial layers doped for conduction types, topped with a crystalline ternary rare earth oxide layer that is lattice matched to silicon, allowing for controlled up-conversion of energy at specific wavelengths, with defined areas sensitive to pump and sense wavelengths, optimizing energy production and detection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional IR sensors are used, then detection capability is achieved, but manufacturing cost and complexity increase significantly

Engineering Contradiction:
Improvedetection capabilityVSAvoidmanufacturing cost and complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs a composite structure combining silicon substrate with epitaxially grown rare earth oxide layers (such as gadolinium oxide and neodymium oxide). This composite material approach enables IR detection functionality while utilizing standard silicon manufacturing processes, thereby reducing manufacturing cost and complexity compared to conventional IR sensors while maintaining detection capability

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent modifies the optical properties of the silicon detector by introducing rare earth oxide layers with specific bandgap energies. By changing the material parameters (bandgap, luminescence characteristics) through epitaxial growth, the system achieves IR detection capability using standard silicon fabrication, simplifying manufacturing while preserving detection functionality

Inventive Principle:
Principle #35Parameter changes

2Reliability

If standard IR sensor designs are used, then detection is achieved, but adjustment for maximum efficiency at specific IR frequencies is limited

Engineering Contradiction:
Improvedetection efficiencyVSAvoidadjustment capability for specific frequencies
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent creates different regions within the rare earth oxide layer with varying compositions and thicknesses to optimize detection at specific IR frequencies. By locally tailoring the oxide composition (e.g., varying gadolinium and neodymium ratios) and thickness, the sensor achieves maximum efficiency at targeted frequencies while maintaining overall system performance

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent enables frequency tuning by adjusting the epitaxial growth parameters, oxide composition ratios, and layer thicknesses. This dynamic adjustment capability allows the sensor to be optimized for different IR frequency ranges by modifying the rare earth oxide composition during fabrication, providing versatility while maintaining high detection efficiency

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system enables efficient and cost-effective infrared detection using a relatively inexpensive silicon detector, achieving maximum sensitivity and efficiency by utilizing a ternary rare earth oxide like (Gd1-xNdx)2O3, which is lattice matched to silicon and has no optical transitions at sense or pump wavelengths, enhancing luminescence and detection capabilities.

Implementation Method 1

The upconversion component is selected to produce energy at the upconversion wavelength in response to receiving energy at the pump and sense wavelengths

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Implementation Method 2

a silicon detector of light at an up-conversion wavelength

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS8664735B2IR sensor using REO up-conversion
Publication Date: 2014.03.04 IQE
  • US8664735B2 patent drawing
  • US8664735B2 patent drawing
  • US8664735B2 patent drawing

AI summary

A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.