Upper Dome Chamber Structure for Faster Epitaxial Heating

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Solution Overview

Problem

As semiconductor integrated circuits become more integrated, the smaller size of transistors formed by the epitaxial process in conventional semiconductor process chambers leads to increased process defects due to challenges in achieving uniform temperature and reducing processing time.

Innovation Solution

The semiconductor process chamber design includes a susceptor, base plate, upper and lower domes, and a liner on the inner sidewall, with the upper dome having a unique transparent section that reduces the processing space volume, allowing for faster temperature reach and reduced temperature variation, utilizing lamps and reflectors for efficient heating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a conventional semiconductor process chamber is used, then the chamber can accommodate standard processing requirements, but the processing time is extended and temperature uniformity deteriorates due to larger volume

Engineering Contradiction:

Improveprocessing speedVSAvoidchamber volume

Core Design Contradiction:

ProductivityVSVolume of stationary object

Solution Approach 1:

The chamber volume is segmented by introducing a susceptor with a through-hole that divides the processing space into upper and lower sections. This segmentation reduces the effective volume that needs to be heated, thereby decreasing processing time while maintaining temperature uniformity in each section.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention introduces a vertical dimensionality change by creating an upper dome and lower dome structure around the susceptor. This three-dimensional configuration reduces the horizontal processing volume while maintaining adequate processing space, effectively reducing chamber volume without compromising processing capability.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Loss of time

If the chamber volume is reduced to decrease processing time, then productivity improves, but temperature uniformity across the wafer surface may deteriorate

Engineering Contradiction:

Improvetime to reach target temperatureVSAvoidtemperature uniformity

Core Design Contradiction:

Loss of timeVSTemperature

Solution Approach 1:

The upper dome and lower dome are designed with different transparency characteristics. The upper dome is more transparent to allow efficient light transmission for heating, while the lower dome provides appropriate shielding. This local quality differentiation optimizes heat distribution and maintains temperature uniformity across the wafer surface.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

Temperature sensors are strategically positioned to monitor temperature distribution within the reduced volume chamber. This feedback mechanism allows real-time adjustment of heating parameters to maintain uniform temperature across the wafer surface despite the reduced chamber volume.

Inventive Principle:

Principle #23Feedback

3Use of energy by moving object

If the upper dome is made more transparent to improve heating efficiency, then energy utilization improves, but structural strength and sealing capability may deteriorate

Engineering Contradiction:

Improveheating efficiencyVSAvoiddome structural strength

Core Design Contradiction:

Use of energy by moving objectVSStrength

Solution Approach 1:

The upper dome is constructed using composite materials that combine high transparency to light with adequate mechanical strength. This allows the dome to transmit heating light efficiently while maintaining the structural integrity required for vacuum sealing and withstanding processing conditions.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces the time to reach target process temperatures, minimizes temperature variations, and decreases defects in forming epitaxial semiconductor layers, thereby enhancing productivity.

Implementation Method 1

upper dome having a unique transparent section that reduces the processing space volume, allowing for faster temperature reach and reduced temperature variation, utilizing lamps and reflectors for efficient heating

Methodology Applied

Scientific EffectLight absorption and conversion to thermal energy: Absorption (EM radiation)

Implementation Method 2

upper lamps coupled to the upper reflector, a lower reflector configured to reflect light towards the susceptor through the lower dome and lower lamps coupled to the lower reflector

Methodology Applied

Scientific EffectThermal radiation: Thermal Radiation

Data Source

PatentUS11821106B2Semiconductor process chamber including lower volume upper dome

Publication Date: 2023.11.21 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.