Upper Electrode Buffer Space for Uniform Bevel Etch Gas Flow
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing plasma etch apparatuses face challenges in achieving uniform gas mixing and flow during substrate processing, leading to inconsistent plasma processing quality, particularly in bevel etch applications where a single gas supply line struggles to provide a uniform flow and mix multiple gases effectively.
Innovation Solution
The substrate processing apparatus incorporates an upper electrode unit with a dielectric plate, a support body forming a buffer space, and a baffle ring on the gas flow path, which allows for efficient mixing and distribution of process gases, including a porous baffle ring with through holes to ensure uniform gas flow to the substrate edge region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gas supply line is used to supply process gas to the substrate edge region, then the device complexity is reduced, but the gas mixing uniformity and flow distribution deteriorate
Solution Approach 1:
The single gas supply line is segmented into multiple gas supply lines (first, second, and third gas supply lines) that supply gas to different regions of the substrate edge. This segmentation allows independent control of gas flow to different areas, improving gas mixing uniformity while maintaining relatively simple device structure.
Solution Approach 2:
A buffer space is introduced as an intermediary chamber between the gas supply lines and the substrate edge region. Multiple gases are mixed in this buffer space before being supplied to the substrate, ensuring uniform gas composition and flow distribution without requiring complex direct mixing structures.
2Device complexity
If a single gas supply line is used, then the device complexity is reduced, but the plasma processing uniformity deteriorates
Solution Approach 1:
The gas supply system is segmented into multiple lines targeting different substrate regions, allowing precise control of plasma generation in each area. This ensures uniform plasma processing across the substrate edge while keeping the overall system structure simple.
Solution Approach 2:
The buffer space serves as a mixing chamber that ensures uniform gas composition before plasma generation. This intermediary structure guarantees consistent plasma properties across different substrate regions without requiring complex plasma control systems.
3Device complexity
If gases are not sufficiently mixed, then the gas supply process is simpler, but the plasma excitation uniformity deteriorates
Solution Approach 1:
The buffer space acts as a dedicated mixing chamber where multiple process gases are thoroughly mixed before being supplied to the substrate. This simple intermediary structure ensures uniform gas composition and consistent plasma excitation without requiring complex mixing devices.
Solution Approach 2:
Gas mixing is performed in advance in the buffer space before the gas reaches the substrate edge region. This preliminary mixing action ensures uniform gas composition is achieved before plasma generation, maintaining plasma excitation uniformity while keeping the overall system simple.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the uniformity of plasma processing, improves gas mixing, and ensures efficient substrate processing by maintaining a consistent gas flow and plasma state, addressing the limitations of single gas supply lines in bevel etch applications.
Implementation Method 1
The baffle ring may include a porous material to allow the process gas to flow
Implementation Method 2
the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space
Implementation Method 3
Plasma refers to an ionized gas state composed of ions, radicals, electrons, or the like. Plasma is generated by a very high temperature, a strong electric field, or a radio frequency (RF) electromagnetic field
Data Source
AI summary
A substrate processing apparatus is provided. The substrate processing apparatus includes a housing having an interior space, a lower electrode unit supporting a substrate in the interior space, an upper electrode unit facing the lower electrode unit, and a gas supply unit supplying a process gas to the interior space, wherein the upper electrode unit includes a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body supporting the dielectric plate, wherein the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the interior space.