Upper Electrode Structure With Integrated Electrostatic Cooling
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in efficiently cooling the electrode plate, as conventional electrostatic chucks fixed with adhesives do not effectively conduct heat away from the electrode plate.
Innovation Solution
An upper electrode structure with an electrostatic attracting film integrally formed on a cooling plate, which includes a coolant channel and gas channels, effectively attracts and cools the electrode plate by direct contact, enhancing heat conduction and cooling efficiency while preventing abnormal discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If an electrostatic chuck is fixed to the gas plate by an adhesive, then the electrostatic chuck can be securely mounted, but the heat conduction from the electrode plate to the cooling plate is insufficient
Solution Approach 1:
The electrostatic chuck is integrally formed with the cooling plate as a single unified structure, eliminating the adhesive layer and creating direct thermal contact between the electrode plate and cooling plate for effective heat conduction while maintaining secure mounting through electrostatic attraction
Solution Approach 2:
The electrostatic chuck is formed by integrating a dielectric material with the cooling plate structure, creating a composite component that simultaneously provides electrostatic attraction, thermal conduction, and structural support functions
2Ease of operation
If a conventional electrostatic chuck structure is used, then the electrode plate can be held, but cooling efficiency is poor due to inadequate heat conduction
Solution Approach 1:
The electrostatic chuck and cooling plate are merged into a single integrated component, allowing simultaneous achievement of electrode plate holding through electrostatic attraction and efficient heat removal through direct thermal conduction to the coolant channels
3Ease of manufacture
If the electrostatic chuck is separately fixed to the gas plate, then assembly is simple, but abnormal discharge may occur and cooling is inefficient
Solution Approach 1:
The electrostatic chuck and cooling plate are integrated into a single component, eliminating gaps and interfaces that could cause abnormal discharge, while the integral structure ensures reliable thermal contact and stable plasma discharge performance
Solution Approach 2:
The integrated electrostatic chuck incorporates dielectric and cooling functions in a single composite structure, ensuring both electrical insulation for discharge stability and thermal conduction for efficient cooling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient cooling of the electrode plate by direct heat conduction and gas-assisted cooling, suppressing abnormal discharge and achieving uniform temperature control across the electrode plate.
Implementation Method 1
The electrostatic attracting film is formed on a bottom surface of the cooling plate and configured to electrostatically attract the electrode plate
Implementation Method 2
The electrode plate is disposed below the cooling plate... enabling efficient cooling of the electrode plate by direct heat conduction
Implementation Method 3
The cooling plate has a coolant channel
Data Source
AI summary
A plasma processing apparatus comprises a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode structure disposed above the substrate support.The upper electrode structure includes a cooling plate having a coolant channel, an electrode plate disposed below the cooling plate, and an electrostatic attracting film formed on a bottom surface of the cooling plate and configured to electrostatically attract the electrode plate. The electrostatic attracting film has a dielectric portion and at least one conductor portion disposed in the dielectric portion. The plasma processing apparatus further comprises a power supply electrically connected to the at least one conductor portion.