Upper Electrode Power Compensation for Multi-Chamber Plasma Consistency
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Solution Overview
Problem
Existing semiconductor process apparatuses suffer from poor consistency in plasma parameters across different process chambers, leading to inconsistent process results.
Innovation Solution
A power adjustment method for the upper electrode power supply, which involves determining a power compensation coefficient based on the processing loads of a reference and current process chamber, and adjusting the power output accordingly to maintain consistent plasma parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If standard power supply configuration is used in multiple process chambers, then device complexity is reduced and ease of manufacture is improved, but plasma parameter consistency deteriorates
Solution Approach 1:
The patent applies parameter changes by adjusting the power supply parameters (power compensation coefficient) based on the processing load of each process chamber. The system calculates a power compensation coefficient for each chamber relative to a reference chamber, enabling customization of power parameters to achieve consistent plasma parameters across chambers with different processing loads, thereby resolving the contradiction between standardization and consistency.
2Manufacturing precision
If power compensation is implemented for each process chamber, then plasma parameter consistency is improved, but device complexity and operation complexity increase
Solution Approach 1:
The system implements self-service by automatically calculating and adjusting the power compensation coefficients based on the processing loads of each process chamber. The control unit autonomously determines the power compensation coefficients without requiring manual intervention, and the power supply automatically applies the compensated power, thereby improving process consistency while maintaining ease of operation.
Solution Approach 2:
The patent employs feedback mechanisms by continuously monitoring the processing load of each process chamber and using this information to dynamically adjust the power compensation coefficients. The system compares the actual processing load with the reference chamber and automatically modifies the power output to maintain consistent plasma parameters, creating a closed-loop control system that resolves the contradiction between precision and operational simplicity.
3Manufacturing precision
If processing loads are measured and compensated for each chamber, then plasma parameter consistency is improved, but measurement precision requirements and device complexity increase
Solution Approach 1:
The patent applies partial action by measuring and compensating only for the processing load parameter that has the most significant impact on plasma consistency, rather than attempting to measure and control all possible parameters. The system focuses on power load measurement and compensation, which provides sufficient improvement in plasma parameter consistency without requiring excessively precise measurement of all chamber parameters, thereby resolving the contradiction between precision improvement and measurement complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves the consistency of plasma parameters and process results across different process chambers by ensuring consistent power application to the plasma, thereby enhancing productivity and manufacturing capabilities for highly integrated devices.
Implementation Method 1
by introducing various reaction gases (such as Cl2, SF6, C4F8, O2, etc.) into a vacuum process chamber, bound electrons in a gas atom are freed from potential wells by applying an external electromagnetic field (DC or AC). Then, free electrons with kinetic energy collide with molecules, atoms, or ions to completely deionize the gases to form the plasma.
Data Source
AI summary
The present disclosure provides a power adjustment method of an upper electrode power supply of a semiconductor process apparatus. The method includes obtaining a processing load of an upper electrode power supply of a reference process chamber and a processing load of an upper electrode power supply of a current process chamber corresponding to semiconductor process step, when starting to perform a semiconductor process step, determining a power compensation coefficient for the current process chamber relative to the reference process chamber based on the processing load of the current process chamber and the processing load the reference process chamber, and controlling the upper electrode power supply to output compensation power. The compensation power is a product of the set power of the upper electrode power supply of the current process chamber corresponding to the semiconductor process step and the corresponding power compensation coefficient.