Upper Heater Segmentation for Silicon Crystal Growth
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Solution Overview
Problem
Existing silicon single crystal growth apparatuses face challenges in maintaining a uniform thermal environment, leading to non-uniform temperature distribution and longer process times, which affect crystal quality and efficiency as the crucible size increases.
Innovation Solution
The apparatus employs a chamber with a crucible, a support shaft, a main heater, and an upper heater part with ring-shaped heaters of varying diameters, along with a control unit and pyrometers to maintain a uniform temperature gradient, preventing localized solidification and optimizing the melting process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a larger crucible is used to grow silicon single crystals with larger diameter, then the crystal diameter is improved, but the melting time of poly silicon becomes longer
Solution Approach 1:
The heating system is divided into multiple independent heating zones: a main heater surrounding the crucible and additional heaters positioned above the crucible. This segmentation allows simultaneous heating of different regions, accelerating the overall melting process while maintaining uniform temperature distribution in the large crucible.
Solution Approach 2:
Heaters are added in the vertical dimension above the crucible, transitioning from a single-plane heating arrangement to a multi-dimensional heating configuration. This enables heat to be applied from both lateral and vertical directions, significantly reducing melting time for large-volume poly silicon.
2Area of moving object
If a larger crucible is used to grow silicon single crystals with larger diameter, then the crystal diameter is improved, but the process time becomes longer
Solution Approach 1:
The heating system is divided into multiple independent heating zones: a main heater surrounding the crucible and additional heaters positioned above the crucible. This segmentation allows simultaneous heating of different regions, accelerating the overall melting process while maintaining uniform temperature distribution in the large crucible.
Solution Approach 2:
Multiple heaters operate simultaneously and continuously to maintain optimal temperature throughout the melting and crystal growth process. The main heater and upper heaters work in parallel, ensuring continuous and efficient heat supply without interruption, thereby reducing total process time.
3Device complexity
If conventional heating is used, then the apparatus structure is simple, but non-uniform temperature distribution causes localized solidification and crystal quality problems
Solution Approach 1:
The heating system is divided into multiple independent heating zones: a main heater surrounding the crucible and additional heaters positioned above the crucible. This segmentation allows simultaneous heating of different regions, accelerating the overall melting process while maintaining uniform temperature distribution in the large crucible.
Solution Approach 2:
Different heating zones can be independently controlled to provide locally optimized temperature conditions. The main heater provides lateral heating while upper heaters provide vertical heating, allowing precise control of temperature distribution at different locations within the crucible to prevent localized solidification.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures a uniform thermal environment, improving crystal quality and reducing the process time for growing silicon single crystals by quickly melting poly silicon, allowing for precise control of the pulling speed and temperature.
Implementation Method 1
melting the poly silicon through heat generated from a main heater part disposed at a side surface of the crucible and an upper heater part disposed over the poly silicon
Implementation Method 2
the loss of heat is blocked by a heat shielding structure, so that a predetermined temperature gradient is maintained
Data Source
AI summary
An apparatus for growing a silicon single crystal according to embodiments includes a chamber including a crucible accommodating silicon melt; a support shaft rotating and lifting the crucible while supporting the crucible; a main heater part for applying heat to the crucible side, the heater disposed beside the crucible; an upper heat insulation member located over the crucible; and upper heater parts located at a lower end portion of the upper heat insulation member, wherein the upper heater parts have diameters different from each other with respect to a center of the crucible, and include a plurality of ring-shaped heaters which are spaced apart from each other. Due to the individually controllable upper heater parts, a uniform thermal environment can be provided for silicon melt accommodated in a crucible, and localized solidification of the silicon melt can be prevented so that the quality of a silicon single crystal and the ingot pulling speed can be readily controlled.