Upright Snubber Capacitor Layout for Compact Power Modules
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Solution Overview
Problem
Existing snubber circuits in semiconductor devices face challenges in miniaturization and reliability due to the limitations of flat surface-mounted stack ceramic capacitors, which lead to increased noise during high-speed switching operations and high operating costs associated with thin-filmed capacitors.
Innovation Solution
A connection structure for a snubber circuit where stack ceramic capacitors are arranged upright between two substrates, allowing for efficient noise reduction and high reliability while minimizing the mounting area, thus enabling a compact and cost-effective power module design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If flat surface-mounted stack ceramic capacitors are used in the snubber circuit, then the mounting area is predetermined and limited, but this imposes a limitation on miniaturization of the power module and decreases reliability when the mounting substrate is easily warped
Solution Approach 1:
The patent transitions from planar mounting to three-dimensional upright mounting of stack ceramic capacitors. The capacitors are positioned vertically between the insulating substrate and heat dissipation plate, utilizing the thickness direction dimension. This dimensional change reduces the planar mounting area while improving connection reliability by shortening the distance between connection points.
2Object-affected harmful factors
If thin-filmed snubber capacitors are used to reduce noise during high-speed switching, then the noise reduction is effective, but the operating cost of performing a thin film process is very high
Solution Approach 1:
The patent replaces expensive thin-filmed capacitors with conventional stack ceramic capacitors that use standard sintering processes. This substitution maintains the noise reduction function while significantly reducing manufacturing costs by eliminating complex thin-film deposition processes and using readily available ceramic capacitor technology.
3Object-affected harmful factors
If the snubber circuit is provided within the power module adjacent to the power semiconductor, then noise reduction is effective, but the planar arrangement increases the module size
Solution Approach 1:
The patent positions the stack ceramic capacitor vertically between the insulating substrate and heat dissipation plate, utilizing the thickness direction rather than planar space. This three-dimensional arrangement places the snubber circuit immediately adjacent to the power semiconductor in the vertical dimension, achieving effective noise reduction while minimizing the increase in module footprint.
4Ease of manufacture
If normal stack ceramic capacitors are used in a planar arrangement, then the manufacturing cost is low, but the distance from the power semiconductor increases leading to increased noise
Solution Approach 1:
The patent positions the stack ceramic capacitor vertically between the insulating substrate and heat dissipation plate, utilizing the thickness direction rather than planar space. This three-dimensional arrangement places the snubber circuit immediately adjacent to the power semiconductor in the vertical dimension, achieving effective noise reduction while minimizing the increase in module footprint.
Data Source
AI summary
A connection structure of a snubber circuit within a semiconductor device includes: a first substrate having a first electrode wiring line; a second substrate facing the first substrate, the second substrate having a second electrode wiring line facing the first electrode wiring line; and a stack ceramic capacitor having connection terminals provided on opposite ends, respectively, of the stack ceramic capacitor installed in an upright position in such a manner that entire surfaces of the connection terminals are connected to the first and second electrode wiring lines, respectively, where the stack ceramic capacitor is installed adjacent to a switching element attached on the first substrate, and the connection terminal and one electrode terminal on the switching element are connected with the first electrode wiring line interposed therebetween.


