Urea Bond Polymer Recess Embedding for Semiconductor Etch Protection
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Solution Overview
Problem
In semiconductor manufacturing, the removal of sacrificial films can cause damage to the semiconductor device due to the entry of etching gases or solutions through openings, leading to deterioration of internal structures.
Innovation Solution
A method involving the embedding of a polymer with a urea bond in recesses formed on the substrate, where the polymer film is formed over the sacrificial film, allowing its removal while leaving the polymer embedded, which then depolymerizes to prevent damage during the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective portion is formed in the via hole to prevent etchant entry, then damage to internal structures is prevented, but the protective portion itself must be removed which may cause damage to the interior of the structure
Solution Approach 1:
A polymer film made of polymerizable monomers is introduced as an intermediary protective layer. This polymer film serves as a mediator between the etchant and the internal structures, providing protection during etching while being designed to be removable without causing damage through controlled depolymerization or decomposition processes
Solution Approach 2:
The polymer film's chemical and physical parameters are specifically designed to change under controlled conditions. The polymer can be removed by changing temperature, pH, or other parameters that trigger depolymerization or decomposition, allowing removal without the mechanical or chemical damage that would occur with conventional protective layer removal methods
2Ease of manufacture
If a sacrificial film is removed by dry etching or wet etching, then the sacrificial film is successfully removed, but etchant may enter the structure through openings and damage internal members
Solution Approach 1:
The polymer film is formed in advance within the recesses and openings of the structure before the sacrificial film removal process begins. This preliminary protective action ensures that when etchants are applied to remove the sacrificial film, the polymer film is already in place to prevent etchant entry and protect internal structures from damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses damage to the semiconductor device by preventing etchant entry and allowing for the sacrificial film's removal without harming the internal structures, using a polymer that can be easily depolymerized to minimize thermal impact.
Implementation Method 1
removing the polymer film formed on the sacrificial film while leaving the polymer embedded in the recess; removing the sacrificial film in a state in which the polymer is embedded in the recess; and subsequently, removing the polymer embedded in the recess
Data Source
AI summary
There is provided a method of manufacturing a semiconductor device by processing a substrate, which includes: embedding a polymer having a urea bond in a recess formed in the substrate by supplying a material for polymerization from above a sacrificial film to the substrate and forming a polymer film made of the polymer having the urea bond, wherein a surface of the substrate is covered with the sacrificial film, the recess including an opening of the sacrificial film that is formed by a patterning; removing the polymer film formed on the sacrificial film while leaving the polymer embedded in the recess; removing the sacrificial film in a state in which the polymer is embedded in the recess; and subsequently, removing the polymer embedded in the recess.