USB VBUS Discharge Control to Limit Die Heating

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Solution Overview

Problem

Existing USB power delivery systems face thermal reliability issues due to high current discharge of VBUS voltage, leading to increased die temperature and potential reliability risks, especially in USB Type-C interfaces, which are addressed by external power transistors controlled by GPIO signals, increasing die area and cost.

Innovation Solution

A method and apparatus for discharging USB VBUS voltage using a transistor configuration controlled by a USB-PD controller, applying incrementally increasing voltage reference values to an amplifier until a discharge trigger point is reached, then stopping the increment, utilizing existing components and avoiding on-die heating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If on-the-die VBUS discharge is used, then the discharge function is integrated, but power dissipation increases and die temperature rises

Engineering Contradiction:
Improveintegrated discharge functionVSAvoiddie temperature
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The patent extracts the VBUS discharge function from the integrated circuit die and implements it using an external transistor. The discharge path is formed by the external transistor's drain-source channel, separating the high-power discharge operation from the sensitive IC die, thereby eliminating on-die heating while maintaining integrated functionality through GPIO control.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces an external transistor as an intermediary component between the VBUS capacitor and ground. This intermediary handles the high-current discharge path, acting as a buffer that protects the IC die from thermal stress while enabling the discharge function to be controlled by the USB controller through GPIO signals.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If external power transistors are employed, then die temperature is controlled, but die area and cost increase

Engineering Contradiction:
Improvedie temperature controlVSAvoiddie area
Core Design Contradiction:
TemperatureVSArea of stationary object

Solution Approach 1:

The patent extracts the power transistor from the IC die and places it externally, eliminating the need for large die area allocation for power handling components. The external transistor assumes the role of managing high-power discharge operations, allowing the IC die to maintain a compact footprint while achieving effective thermal control.

Inventive Principle:
Principle #2Taking out (Extraction)

3Device complexity

If resistive-type discharge is used, then discharge operation is simple, but current increases at higher VBUS voltage leading to higher power dissipation

Engineering Contradiction:
Improvedischarge operation simplicityVSAvoidpower dissipation
Core Design Contradiction:
Device complexityVSLoss of energy

Solution Approach 1:

The patent replaces the traditional resistive discharge mechanism with a transistor-based electronic switch. Instead of using a resistor that dissipates power continuously according to I²R losses, the external transistor acts as a controlled switch that can efficiently manage the discharge current, reducing power dissipation while maintaining operational simplicity through GPIO control.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively discharges VBUS voltage within USB-PD specifications without causing thermal issues, saving space, reducing die cost, and eliminating the need for additional external components, while maintaining reliability and flexibility.

Implementation Method 1

The amplifier outputs a voltage signal to a gate driver that controls a gate of a transistor

Methodology Applied
Scientific EffectVoltage amplification: Magnetic Amplifier

Data Source

PatentUS12455849B2Universal serial bus voltage discharge
Publication Date: 2025.10.28 INFINEON TECHNOLOGIES AMERICAS CORP
  • US12455849B2 patent drawing
  • US12455849B2 patent drawing
  • US12455849B2 patent drawing

AI summary

Techniques are provided for discharge of a universal serial bus voltage. A determination is made that the universal serial bus voltage has exceeded a threshold. Accordingly, initiation of a discharge operation is triggered to discharge the universal serial bus voltage. The discharge operation includes applying incrementally increasing voltage reference values according to a periodic interval to an amplifier until a discharge trigger point is reached. The amplifier outputs a voltage signal to a gate driver that controls a gate of a transistor that provides a discharge path for the universal serial bus voltage to discharge. In response to reaching the discharge trigger point, the incremental increasing of the voltage reference values applied to the amplifier is stopped.