USG Polishing Liquid Composition for Stable CMP Rate
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Solution Overview
Problem
Existing polishing technologies struggle to achieve an excellent polishing rate for undoped silicate glass (USG) during chemical mechanical polishing (CMP), leading to issues like unstable polishing rates and difficulties in forming fine wiring structures.
Innovation Solution
A polishing liquid with a pH of 3.0 or more, containing abrasive grains such as cerium-based compounds, polyglycerol, and specific nitrogen-containing compounds, is used to enhance the polishing rate of USG, ensuring stable polishing across the surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing liquids are used for USG, then polishing can be performed, but the polishing rate is insufficient and unstable
Solution Approach 1:
The invention changes the pH parameter of the polishing liquid to 3.0 or more, which fundamentally alters the chemical environment to achieve both high polishing rate and stability for USG. This parameter change enables the polishing liquid to effectively interact with the glass surface while maintaining consistent performance.
Solution Approach 2:
The polishing liquid employs a composite formulation combining abrasive grains (such as cerium-based compounds) with specific chemical additives including polyglycerol and nitrogen-containing compounds. This composite approach synergistically combines mechanical abrasion with chemical etching to achieve superior and stable polishing rates.
2Manufacturing precision
If surface irregularities exist, then polishing is required, but fine wiring structures cannot be sufficiently formed
Solution Approach 1:
By adjusting the pH to 3.0 or more, the polishing liquid achieves optimal chemical reactivity with USG, enabling precise removal of surface irregularities while maintaining the integrity of fine wiring structures. This parameter optimization ensures high manufacturing precision.
Solution Approach 2:
The invention enhances the chemical component of CMP by using cerium-based compounds that provide chemical etching capability, reducing reliance on purely mechanical abrasion. This substitution allows for more precise control over surface finishing and fine structure formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polishing liquid achieves a high and stable polishing rate for USG, particularly in the inner regions of the surface, facilitating the formation of fine wiring structures and improving the manufacturing process of semiconductor components.
Implementation Method 1
a surface to be polished of a member to be polished is polished by pressing the member to be polished against the polishing member while a polishing liquid is supplied between the surface to be polished (surface) of the member to be polished and the polishing member
Implementation Method 2
containing abrasive grains
Implementation Method 3
pressing the member to be polished against the polishing member while a polishing liquid is supplied
Data Source
AI summary
A polishing liquid for polishing undoped silicate glass, the polishing liquid having a pH of 3.0 or more. A polishing method including a step of polishing a surface to be polished of a member to be polished containing undoped silicate glass by using the above-described polishing liquid. A method for manufacturing a component, including obtaining a component by using a polished member polished by the above-described polishing method.