UV Blocking Layer for Semiconductor ONO Film Protection
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Solution Overview
Problem
As semiconductor devices miniaturize, ultraviolet (UV) rays generated during plasma treatments damage insulation films like silicon oxide or silicon nitride, and existing UV absorbing layers can lead to leakage currents due to their metal composition and the shrinking gaps between components, causing operational failures.
Innovation Solution
A UV blocking layer based on granular particles, such as silicon particles, is integrated into the insulation films to absorb or block UV rays, preventing damage to the ONO film and reducing leakage currents by ensuring the particles are not in contact with each other, thus disrupting current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a metal UV absorbing layer is formed to block UV rays, then UV ray damage to the ONO film is suppressed, but leakage current flows between plug metals via the UV absorbing layer
Solution Approach 1:
The harmful metal component is extracted from the UV absorbing layer, replacing it with a metal-free insulating film that still provides UV absorption capability through alternative materials, thereby eliminating the leakage current path while maintaining UV protection
Solution Approach 2:
A composite structure is employed where a metal-free insulating film is combined with specific material properties to achieve both UV absorption and electrical insulation, replacing the simple metal layer with a functionally superior composite material system
2Productivity
If the semiconductor device is miniaturized to improve integration, then device density increases, but UV ray damage becomes more problematic and gap distances decrease allowing leakage current
Solution Approach 1:
A dedicated UV absorbing film is introduced as a separate functional layer that can be optimized specifically for UV protection without constraining the miniaturization of other device components, allowing independent optimization of each function
Solution Approach 2:
The metal-free insulating film is designed with composite material properties that provide both UV absorption and electrical insulation, enabling effective UV protection in miniaturized devices without compromising electrical performance or requiring larger gap distances
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The UV blocking layer effectively suppresses UV ray damage to the ONO film and prevents leakage currents, ensuring the semiconductor device's reliability and performance even as the device is miniaturized.
Implementation Method 1
a ultraviolet (UV) blocking layer based on a plurality of granular particles scattered in at least one insulation film formed on lower layer insulation film, where the UV blocking layer suppresses UV rays generated during an additional film deposition from reaching the ONO film
Implementation Method 2
the particles are not in contact with each other, thus disrupting current flow
Data Source
AI summary
Structures and methods for blocking ultraviolet rays during a film depositing process for semiconductor device are disclosed. In one embodiment, a semiconductor device includes an oxide-nitride-oxide (ONO) film formed on a semiconductor substrate, a gate electrode formed on the ONO film, a lower layer insulation film formed on the ONO film and the gate electrode, and a ultraviolet (UV) blocking layer based on a plurality of granular particles scattered in at least one insulation film formed on lower layer insulation film, where the UV blocking layer suppresses UV rays generated during an additional film deposition from reaching the ONO film.