UV Charge Neutralization Chamber for Semiconductor Substrates
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in effectively neutralizing static electricity on substrates, particularly in miniaturized structures, due to issues with ion density, plasma uniformity, and potential damage from high-energy ions, leading to irregular patterns and prolonged decay times.
Innovation Solution
A semiconductor manufacturing apparatus is designed with an ultraviolet generating part that produces target wavelength ultraviolet rays, a substrate driving mechanism, and a grid plate with electrodes of varying radii to accelerate charged particles, ensuring efficient neutralization of static electricity while minimizing substrate damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-density plasma of 10^9 or more is generated in a vacuum chamber to remove static electricity, then static electricity removal capability is improved, but ions are additionally charged on the entire surface due to self-bias and plasma uniformity issues, causing irregular patterns and potential damage
Solution Approach 1:
The patent applies local quality by configuring multiple electrode groups (first electrode group, second electrode group, third electrode group) at different positions and orientations relative to the substrate. Each electrode group targets specific regions with different static electricity characteristics, allowing localized control of ion distribution and energy application rather than uniform treatment across the entire substrate surface.
Solution Approach 2:
The patent segments the ion source into multiple electrode groups with different configurations. The first electrode group has electrodes extending in a first direction, the second electrode group has electrodes extending in a second direction, and the third electrode group has electrodes extending in a third direction. This segmentation enables differentiated ion supply to various regions of the substrate, preventing the uniform over-charging problem caused by single-source plasma treatment.
2Device complexity
If conventional ionizer is used with ion density of 10^6, then device complexity is kept low, but when charge density reaches 10^8 or more, static electricity cannot be effectively removed
Solution Approach 1:
The patent implements dynamics by making the substrate rotate during ion irradiation treatment. The substrate rotation mechanism allows dynamic exposure of different substrate regions to the ion source, ensuring uniform treatment while preventing localized over-charging. This dynamic approach enables effective static electricity removal from high-charge-density regions without requiring excessive ion density from the source.
Solution Approach 2:
The patent introduces a grid plate as an intermediary component between the ion source and the substrate. The grid plate with its mesh structure modulates the ion beam, distributing ions more evenly across the substrate surface and preventing direct high-density ion impact that could cause damage. This intermediary structure enables effective charge removal while maintaining substrate integrity.
3Reliability
If high energy ions are used to neutralize static electricity charged in oxide film and pattern, then static electricity removal capability is improved, but ions collide with substrate and pattern to generate damage
Solution Approach 1:
The patent uses substrate rotation as a dynamic mechanism to control ion-substrate interaction. By rotating the substrate during ion irradiation, the treatment time for any specific location is reduced, and ions are distributed more evenly across the surface. This prevents excessive energy accumulation at any single point, enabling effective static electricity removal while minimizing collision damage to the substrate and patterns.
Solution Approach 2:
The patent employs multiple electrode groups that can be independently controlled to provide partial ion flux to different regions. Rather than applying excessive ion energy uniformly across the entire substrate, the system delivers targeted ion doses to specific areas requiring static electricity removal, thereby achieving neutralization capability while avoiding damage through controlled, region-specific action.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively neutralizes static electricity on semiconductor substrates and patterns, improving process efficiency and yield by providing precise control over ion distribution and energy application.
Implementation Method 1
an ultraviolet generating part disposed in an ultraviolet generating chamber (11) to generate ultraviolet rays of a target wavelength
Implementation Method 2
a grid plate configured to accelerate and provide charged particles to the substrate
Implementation Method 3
a window disposed between the ultraviolet generating chamber and the process chamber to transmit the generated ultraviolet rays to the process chamber
Data Source
AI summary
A semiconductor manufacturing apparatus according to an embodiment of the present invention comprises: an ultraviolet generating part which is disposed in an ultraviolet generating chamber and generates ultraviolet rays of a target wavelength; a substrate driving part including a chuck which is disposed in a process chamber where a substrate fed therein is treated with ultraviolet rays and supports the fed substrate, and an axis which rotates and moves up and down the chuck; and a window which is disposed between the ultraviolet generating chamber and the process chamber and transmits the generated ultraviolet rays to the process chamber.