UV Detection Component Strained Contact Layer
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Solution Overview
Problem
Current UV radiation detection components lack sufficient quantum efficiency and sensitivity, and existing production methods are not cost-effective or simplified.
Innovation Solution
A UV radiation detection component is designed with a semiconductor body comprising a first semiconductor layer strained with respect to its lattice constant, an intrinsic active layer relaxed with respect to its lattice constant, and a second semiconductor layer, which together enhance the built-in electrical field through piezoelectric effects, increasing the component's sensitivity and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the active layer is relaxed with respect to its lattice constant, then the built-in electrical field is amplified, but defects may form and increase losses
Solution Approach 1:
The patent changes the lattice state parameter of the active layer from strained to relaxed, which fundamentally alters the piezoelectric field contribution. This parameter change amplifies the built-in electrical field by eliminating the counteracting piezoelectric field, thereby improving carrier separation efficiency and detection sensitivity without incurring relaxation-related losses
Solution Approach 2:
The patent employs a composite semiconductor structure with different charge carrier types (n-type and p-type layers) surrounding the relaxed active layer. This composite design creates a PIN diode structure where the intrinsic active layer benefits from relaxed lattice conditions while the doped contact layers provide efficient carrier collection, resolving the contradiction between field amplification and loss prevention
2Reliability
If the first semiconductor layer is strained with respect to its lattice constant, then the built-in electrical field is further amplified, but manufacturing complexity increases
Solution Approach 1:
The patent applies strain to the first semiconductor layer by controlling the lattice mismatch parameter during growth. This strain parameter modification generates an additional piezoelectric field that reinforces the built-in field in the active layer, thereby enhancing quantum efficiency. The strain is achieved through standard epitaxial growth techniques by selecting materials with appropriate lattice constants
Solution Approach 2:
The patent performs preliminary strain engineering on the first semiconductor layer during the epitaxial growth process. By pre-establishing the strained state of the contact layer before forming the active layer, the design simplifies subsequent manufacturing steps and ensures optimal field amplification is achieved during the growth process itself rather than requiring post-growth processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The component achieves high quantum efficiency and sensitivity by amplifying the built-in electrical field, allowing for efficient transport of photo-generated charge carriers, thereby improving detection capabilities while being cost-effectively produced.
Implementation Method 1
The achievement of a high built-in electrical field in this case is due to the piezoelectric effect, in particular to the interaction between a spontaneous polarization field and the piezoelectric field within the active layer. In the piezoelectric effect, built-in electrical fields occur due to mechanical strains.
Implementation Method 2
the photons entering the active layer are converted into an electric current by the internal photoelectric effect
Data Source
AI summary
A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0≤n≤1, 0≤m≤1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.