UV Detector Wavelength Conversion for Silicon Sensitivity

The patent introduces a wavelength conversion layer containing fluorescent pigment as an intermediary between the UV ray transmitting part and the silicon-based light receiving element. This fluorescent layer converts UV rays (which silicon cannot detect) into visible light wavelengths that silicon photodiodes can effectively detect, thereby enabling UV detection sensitivity with standard silicon-based elements without requiring specialized UV-sensitive materials

The patent changes the wavelength parameter of the incident light through the wavelength conversion layer. By selecting fluorescent pigments with specific excitation and emission characteristics, UV radiation at wavelengths outside silicon's detection range is transformed into visible light wavelengths within silicon's optimal detection range, resolving the sensitivity issue while maintaining device simplicity

The patent replaces expensive, difficult-to-manufacture specialized UV-sensitive materials (zinc oxide, gallium nitride) with inexpensive, readily available silicon-based photodiodes. The cost and manufacturing complexity are significantly reduced by using standard silicon technology while achieving the same UV detection function through the wavelength conversion mechanism

The patent makes the silicon-based light receiving element perform multiple functions: it detects both visible light directly and UV-induced visible light through the fluorescent conversion layer. This universal approach allows a single type of photodiode to handle different wavelength regions, eliminating the need for specialized UV-sensitive materials