UV Light Emitting Element Barrier Structure for Higher Output

The patent applies parameter changes by systematically varying the composition ratios of Al, Ga, and In in the barrier and well layers. Specifically, the barrier layers have different Al and Ga compositions to create appropriate band gap differences, while the well layers have optimized Ga and In ratios to enhance electron-hole recombination probability. This compositional parameter optimization resolves the contradiction by maintaining reliable recombination while achieving high output emission.

The patent employs composite materials by creating a multiple quantum well structure with alternating barrier layers and well layers made of different nitride semiconductor compositions. The barrier layers contain AlGaN and AlInGaN compounds with different band gaps, while the well layers contain InGaN compounds. This composite structure enables both sufficient electron-hole recombination in the well layers and effective carrier confinement through the barrier layers, thereby achieving high output emission.

The patent applies local quality by creating spatial variation in material composition within the quantum well structure. The barrier layers have locally optimized Al and Ga compositions to provide strong carrier confinement, while the well layers have locally optimized Ga and In compositions to minimize lattice mismatch and maintain smooth surfaces. This local compositional optimization allows simultaneous achievement of strong confinement and low surface roughness.

The patent uses parameter changes by systematically adjusting the Al, Ga, and In composition ratios in different layers. The barrier layers have higher Al content for larger band gap and stronger confinement, while the well layers have optimized Ga and In ratios to reduce lattice constant differences with adjacent barrier layers. This parameter optimization reduces lattice relaxation and surface roughness while maintaining effective carrier confinement.