Normal Pressure UV Film Removal for Semiconductor Planarization
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices with multilayer wiring structures face challenges in planarizing the surface of wafers due to the need for transferring wafers between different pressure systems, leading to increased costs and reduced throughput, and the dry etching process can damage or modify films on the wafer.
Innovation Solution
A substrate processing method that involves coating a source material on a substrate, decomposing it with ultraviolet rays in an oxygen-containing atmosphere, and removing part of the processing target film by irradiating ultraviolet rays within a processing chamber with controlled gas flow and oxygen concentration, allowing for planarization under normal pressure without damaging the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching method is used to remove SOC film, then film removal is achieved, but wafer or film is damaged by plasma
Solution Approach 1:
The patent changes the fundamental parameter of the removal process from plasma-based (dry etching) to UV radiation-based in oxygen atmosphere. This parameter change allows film removal through photochemical decomposition and oxidation without the damaging plasma effects, resolving the contradiction between effective film removal and substrate damage prevention
Solution Approach 2:
The patent utilizes oxygen atmosphere combined with UV irradiation to create strong oxidizing conditions that decompose and remove the organic SOC film. The oxygen acts as a strong oxidant that reacts with the organic material under UV activation, achieving film removal without plasma damage to the substrate
2Ease of manufacture
If wafer is transferred between normal pressure and vacuum systems, then coating and etching processes are completed, but manufacturing cost increases and throughput decreases
Solution Approach 1:
The patent merges the coating, heating, and film removal processes into a single integrated system that operates continuously under normal pressure atmosphere. By combining these previously separate processes (coating in normal pressure, etching in vacuum) into one unified process flow, the patent eliminates transfer steps and improves throughput while maintaining manufacturing capability
Solution Approach 2:
The patent creates a universal processing system that can perform multiple functions (coating, heating, and UV-based film removal) within a single normal pressure chamber. This multi-functional approach replaces the need for separate vacuum etching equipment, reducing system complexity and improving manufacturing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables uniform removal of the processing target film under normal pressure, reducing manufacturing costs and minimizing substrate damage, while maintaining the integrity of the film on the wafer.
Implementation Method 1
a source material of a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere
Implementation Method 2
decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere
Data Source
AI summary
A substrate processing apparatus includes a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber. Further, the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate.