UV LED p-Type AlGaInN Hydrogen Removal Without Output Loss
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Light-emitting elements with nitride semiconductors face significant output decreases due to hydrogen migration from p-type nitride semiconductor layers, especially in high Al composition layers, where hydrogen is difficult to remove without affecting the light-emitting performance.
Innovation Solution
A method involving the use of ultraviolet light irradiation and heat treatment in a nitrogen or nitrogen-oxygen atmosphere at elevated temperatures, with specific voltage conditions, to efficiently remove hydrogen from the p-type layer of high Al composition nitride semiconductors without reducing the light-emitting element's output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional heat treatment is applied to remove hydrogen from p-type nitride semiconductor layers, then hydrogen removal is achieved, but light-emitting element output decreases significantly
Solution Approach 1:
The invention changes the parameters of heat treatment by introducing specific atmosphere compositions (N2 with O2 content of 1-20 vol%, preferably 5-15 vol%) and temperature ranges (400-700°C, preferably 500-650°C) to achieve effective hydrogen removal while preventing output degradation. The atmospheric composition parameter is specifically optimized to enable hydrogen removal without causing the harmful effects seen in conventional treatments.
Solution Approach 2:
The invention uses an intermediary atmosphere composition (N2 with controlled O2 content) as a mediator between the hydrogen-containing p-type layer and the light-emitting layer. This intermediary atmosphere enables hydrogen removal while the N2-O2 mixture prevents the direct harmful interaction that causes output degradation, acting as a controlled medium for the hydrogen removal process.
2Object-affected harmful factors
If high Al composition is used in p-type layer to suppress light absorption, then light absorption is reduced, but hydrogen retention increases making removal difficult
Solution Approach 1:
The invention changes the atmospheric parameters to N2 with controlled O2 content (1-20 vol%) and adjusts treatment temperature (400-700°C) to overcome the high hydrogen retention ability of high Al composition materials. This parameter change enables effective hydrogen removal from AlGaN layers with Al composition of 20-100%, which previously resisted conventional hydrogen removal methods.
Solution Approach 2:
The invention introduces oxygen (1-20 vol% in N2 atmosphere) as a strong oxidizing agent to accelerate hydrogen removal from high Al composition p-type layers. The oxidizing environment facilitates the breakdown of strong Al-H bonds that normally retain hydrogen, enabling effective hydrogen removal from materials with high light transmission properties.
3Power
If short wavelength light emission is implemented, then high energy output is achieved, but hydrogen separation from p-type layer increases
Solution Approach 1:
The invention applies preliminary heat treatment with N2-O2 atmosphere (400-700°C, 1-20 vol% O2) to the p-type layer before the light-emitting element begins operation. This preliminary action removes hydrogen from the p-type layer in advance, preventing the high-energy short wavelength light from later causing hydrogen separation and migration to the light-emitting layer.
Solution Approach 2:
The invention applies preliminary anti-action by using N2-O2 atmosphere heat treatment to remove hydrogen from the p-type layer before operation. This preliminary anti-action counteracts the potential harmful effect of hydrogen separation that would otherwise be caused by high-energy short wavelength light emission during device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes hydrogen from the p-type layer of high Al composition nitride semiconductors, preventing output degradation of light-emitting elements while maintaining their performance.
Implementation Method 1
removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm
Implementation Method 2
treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied
Data Source
AI summary
A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.