UV LED Chip with Insulated Epitaxial Segments

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Ultraviolet LED chips face issues with poor heat dissipation and electrostatic discharging hazards, which affect their performance and reliability.

Innovation Solution

The ultraviolet LED chip design includes an epitaxial structure with an insulating layer to isolate it into two structures, a groove contacting layer that connects the N-type AlGaN layer electrically and provides an electrostatic discharging channel, and a base plate for improved heat dissipation through the quantum well layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the ultraviolet LED chip uses traditional structure with base plate and epitaxial structure, then the chip can achieve basic light emission function, but the heat dissipation performance is poor causing limited chip performance

Engineering Contradiction:
Improveheat dissipation performanceVSAvoidchip performance limitation
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent divides the epitaxial structure into two separate structures by introducing an insulating layer in the middle, which segments the heat dissipation paths and allows for improved thermal management. The groove contacting layer further segments the electrical contact regions, enabling independent optimization of heat dissipation and electrical connection pathways.

Inventive Principle:
Principle #1Segmentation

2Reliability

If the ultraviolet LED chip uses traditional structure, then the manufacturing process is relatively simple, but electrostatic discharging hazards occur affecting reliability

Engineering Contradiction:
Improveelectrostatic discharging hazard reductionVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating layer acts as an intermediary element that physically separates the epitaxial structure into two independent structures. This intermediary layer prevents electrostatic discharging hazards by isolating charge paths while maintaining the necessary electrical connections through the groove contacting layer, thus improving reliability without excessive complexity increase.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If the groove contacting layer penetrates the epitaxial structure to connect N-type AlGaN layer, then electrostatic discharging channel is provided improving reliability, but the device structure becomes more complex

Engineering Contradiction:
Improveelectrostatic discharging protectionVSAvoidepitaxial structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The groove contacting layer serves multiple functions simultaneously: it provides electrostatic discharging protection by creating a dedicated discharge channel, maintains electrical connection to the N-type AlGaN layer, and acts as part of the insulating structure. This multi-functionality reduces the need for separate components, thereby limiting the increase in device complexity while achieving improved reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances heat dissipation, reduces electrostatic discharging hazards, increases forward voltage, and improves the light extraction coefficient and reliability of the ultraviolet LED chip.

Implementation Method 1

an ultraviolet LED chip comprises a substrate, an epitaxial structure growing on a surface of the substrate, an insulating layer arranged in the epitaxial structure

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

the groove contacting layer penetrates a portion of the first epitaxial structure, is connected electrically to the N-type AlGaN layer in the first epitaxial structure, and is insulated from other structures in the first epitaxial structure

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentUS10811561B2Ultraviolet LED chip and manufacturing method thereof
Publication Date: 2020.10.20 GUANGDONG UNIV OF TECH
  • US10811561B2 patent drawing
  • US10811561B2 patent drawing
  • US10811561B2 patent drawing

AI summary

In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.