Ultraviolet Light-Emitting Element With Vacuum-Sealed Electron Injection
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Solution Overview
Problem
Ultraviolet light-emitting diodes face challenges in achieving high light efficiency and reliability due to low dopant activation rates and high resistance in p-type semiconductor layers, leading to reduced light output and lifespan, especially in UV-B and UV-C wavelength bands.
Innovation Solution
An ultraviolet light-emitting element is designed with an electron supply unit that emits electrons through a first voltage difference, a light-emitting unit where electrons collide with a multi-quantum well structure to form ultraviolet light, and a sealing unit that maintains a vacuum state, excluding the formation of a p-type semiconductor layer to avoid absorption issues and enhance light intensity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a p-AlGaN layer with Mg doping is used to supply holes, then hole supply is enabled, but dopant activation rate is low and resistance is high
Solution Approach 1:
The patent removes the problematic p-AlGaN layer with Mg doping from the device structure. Instead of using a p-type semiconductor layer, the invention uses an n-type semiconductor layer with electron injection, completely eliminating the source of low dopant activation and high resistance issues associated with Mg-doped AlGaN.
Solution Approach 2:
The patent inverts the conventional light-emitting diode structure by using only n-type semiconductor layers instead of the typical p-n junction. Electrons are injected from the n-type layer and holes are generated in situ through electron-hole pair creation, reversing the traditional approach of injecting both carriers from doped layers.
2Reliability
If a p-GaN layer is formed on p-AlGaN to improve dopant activation, then hole supply increases, but ultraviolet light is absorbed and emission intensity decreases
Solution Approach 1:
The patent removes the p-GaN layer that absorbs ultraviolet light from the device structure. By eliminating all p-type semiconductor layers, the invention prevents ultraviolet light absorption and enables high-intensity emission without the trade-off present in conventional designs.
Solution Approach 2:
The patent converts the harmful effect of light absorption by p-type layers into a benefit by completely eliminating p-type layers. This removal transforms what would have been a loss mechanism into a gain, allowing all generated ultraviolet light to be emitted without absorption.
3Ease of operation
If holes pass through high-resistance p-AlGaN to reach the active region, then hole injection is achieved, but heat is generated and lifespan is reduced
Solution Approach 1:
The patent removes the high-resistance p-AlGaN layer that causes heat generation during hole transport. By using an all-n-type structure with electron injection, the invention eliminates the resistive heating problem that limits device lifespan in conventional p-n junction LEDs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the production of ultraviolet light with desired intensity and wavelength by controlling electron energy and density, increasing light efficiency and extending the lifespan of the light-emitting element while maintaining a high vacuum state.
Implementation Method 1
an electron supply unit which emits electrons due to a first voltage difference
Implementation Method 2
a light-emitting unit which forms ultraviolet light due to the electrons emitted from the electron supply unit being accelerated and colliding with a multi-quantum well structure
Data Source
AI summary
Disclosed is an ultraviolet light-emitting element which uses an electron emission operation. The ultraviolet light-emitting element is sealed to maintain a high degree of vacuum. A emission substrate is prepared for the electron emission and an electron emitted from the emission substrate passes through a control substrate. The electron, which has passed through the control substrate, collides with a light-emitting substrate, from which formation of a p-type semiconductor has been excluded, and thus forms ultraviolet light.