UV Light Irradiation for Silicon Native Oxide Quality
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Solution Overview
Problem
Existing methods for growing native oxide layers on silicon substrates for semiconductor analysis are costly and time-consuming, particularly for cross-section samples, leading to defects and reduced reproducibility in scanning capacitance microscopy (SCM) measurements.
Innovation Solution
Irradiating UV light of specific wavelengths (180 nm - 400 nm) under a low-water-vapor environment with controlled humidity to improve the quality of native oxide layers on silicon substrates, reducing defects and enhancing the reproducibility of SCM signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional thermal oxidation or wet oxidation methods are used to grow oxide layers on silicon substrates, then good quality oxide layers can be obtained, but the process is costly and time-consuming
Solution Approach 1:
The patent replaces traditional thermal oxidation methods with UV light irradiation to grow oxide layers on silicon substrates. This substitution of the oxidation mechanism dramatically reduces processing time from hours to minutes while maintaining oxide layer quality, directly resolving the contradiction between oxide quality and oxidation time
Solution Approach 2:
The patent changes the oxidation parameters by using UV light irradiation instead of thermal energy, and controls the oxidation process in a humidity-controlled environment. This parameter change enables rapid oxide growth with high quality, simultaneously improving both oxidation speed and oxide layer quality
2Reliability
If traditional semiconductor processes are used for growing oxide layer on cross-section samples, then oxide layer can be formed, but the process is complex and costly
Solution Approach 1:
The patent replaces complex traditional semiconductor oxidation processes with a simple UV light irradiation method. This substitution eliminates the need for complex equipment and multi-step processes, making the oxide layer formation simple, fast, and low-cost while maintaining high quality
Solution Approach 2:
The patent utilizes the natural photochemical reaction between UV light, oxygen, and silicon to form oxide layers. This self-service approach eliminates the need for complex process equipment and intervention, achieving high-quality oxide growth through a simple, elegant process
3Ease of manufacture
If native oxide layer is grown without UV light irradiation, then the growth process is simple, but the oxide layer contains defects and poor quality
Solution Approach 1:
The patent introduces UV light as an intermediary to facilitate the oxidation process. The UV light acts as a catalyst that enables high-quality oxide formation without requiring complex equipment or processes, thus maintaining simplicity while dramatically improving oxide layer quality
Solution Approach 2:
The patent changes the oxidation parameters by introducing UV light irradiation and controlling humidity, which transforms the oxidation process from defect-prone to high-quality while keeping the process simple and equipment-free
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces defects in native oxide layers, improves the quality and stability of SCM signals, and simplifies the preparation of cross-section samples, enhancing the reliability and life cycle of silicon substrate samples for SCM analysis.
Implementation Method 1
irradiating ultraviolet (UV) light under a humidity-controlled environment for reducing defects of the native oxide layer after being grown
Implementation Method 2
irradiating cross section of the to-be-treated sample with UV-light under a low-water-vapor environment, where the to-be-treated sample is irradiated with UV light of a wavelength of 180 nanometers (nm) ̃400 nm
Data Source
AI summary
The present invention relates to the growth of a native oxide layer on a surface of a silicon substrate. Deep ultraviolet (UV) light is irradiated to thereby effectively improve the quality of the native oxide layer. By improving the quality, the difficulty of the surface treatment of a cross-section sample for scanning capacitance microscopy (SCM) is improved. The life cycle and reliability of the sample are also improved with enhanced reproducibility for the measurement of SCM. Thus, the present invention provides an improved method and an apparatus using the same to prepare a cross-sectional sample for SCM. The feasibility and the concrete method for enhancing oxide layer quality on a silicon substrate surface by UV light irradiation under a humidity-controlled environment are established. The optimum parameters of irradiation time for n-type and p-type samples are made.