UV-Curable Organosilicon Coating for Scratch Resistance and Stability
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Solution Overview
Problem
Existing coating agents for organic materials used in vehicle parts require complex multi-step processes to form durable hard films, leading to increased costs and potential instability during storage due to ionic photobase generators.
Innovation Solution
A coating agent containing a film-forming organosilicon compound with radical polymerizable functional groups and alkoxysilyl groups, combined with a nonionic photobase generator that generates a base and radical upon UV irradiation, allowing simultaneous sol-gel and radical polymerization for a durable coating film with improved adhesion and storage stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a two-layer structure (primer layer and hard coat layer) is formed to improve scratch resistance, then durability against scratches is improved, but the work becomes complicated and cost increases
Solution Approach 1:
The patent combines the primer layer and hard coat layer into a single integrated coating layer. This coating layer contains both organosilicon compounds (providing adhesion and flexibility) and inorganic materials (providing hardness and scratch resistance), merging the functions of two separate layers into one unified structure that simplifies the coating process while maintaining durability.
Solution Approach 2:
The patent uses composite materials by combining organic organosilicon compounds with inorganic materials (such as metal oxides or ceramic particles) within the same coating layer. This composite structure allows the coating to simultaneously exhibit adhesion properties from the organic component and hardness/scratch resistance from the inorganic component, eliminating the need for separate primer and hard coat layers.
2Reliability
If an ionic photobase generator is used to enable sol-gel reaction, then film-forming capability is improved, but storage stability deteriorates due to base liberation in the dark
Solution Approach 1:
The patent extracts and removes the problematic ionic photobase generator from the coating composition. Instead, it employs alternative curing mechanisms such as moisture-curing sol-gel reactions or radical polymerization that do not rely on ionic photobase generators, thereby eliminating the source of base liberation and storage instability while maintaining film-forming capability.
Solution Approach 2:
The patent changes the chemical parameters of the photobase generator or curing mechanism. It transitions from using ionic photobase generators to using non-ionic alternatives or different curing chemistries (such as moisture-curing or UV-free radical polymerization), which fundamentally alter the reaction conditions to prevent premature base liberation and improve storage stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The coating agent forms a durable film with enhanced scratch resistance and adhesion through a simple operation, while maintaining storage stability by using a nonionic photobase generator that prevents base liberation in the dark.
Implementation Method 1
a film-curing component composed so that a base and a radical can be generated on irradiation with ultraviolet light
Implementation Method 2
simultaneous sol-gel and radical polymerization for a durable coating film
Implementation Method 3
a nonionic photobase generator having no ionic bond in a molecular structure
Data Source
AI summary
A coating agent has: a film-forming component containing an organosilicon compound having a radical polymerizable functional group and an alkoxysilyl group; and a film-curing component composed so that a base and a radical can be generated on irradiation with ultraviolet light. The film-curing component includes a nonionic photobase generator having no ionic bond in the molecular structure. The content of the nonionic photobase generator is 0.1 parts by mass or more and 50 parts by mass or less, based on 100 parts by mass of the organosilicon compound.