UV-Patternable DPP-Thiophene Polymer Blends for OTFTs

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional organic thin-film transistors (OTFTs) face challenges with OSC layers due to gelling issues and low reproducibility, which are exacerbated by the complexity of high-temperature and high-vacuum deposition processes, as well as the adverse effects of photolithographic patterning on conjugated organic materials.

Innovation Solution

A polymer blend comprising a diketopyrrolopyrrole (DPP)-fused thiophene polymeric material with both linear and branched alkyl-substituted DPP portions, combined with a crosslinker and photoinitiator, is developed for use as a UV-patternable OSC layer, allowing for improved solubility and processing characteristics, and enabling efficient patterning without the need for harsh chemicals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional OSC polymers with gelling structures are used, then the OSC layers can be formed, but gelling issues and low reproducibility occur

Engineering Contradiction:
ImprovereproducibilityVSAvoidgelling issues
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent uses a composite material system consisting of DPP-fused thiophene polymer combined with crosslinkers (such as bisphenol A diglycidyl ether) and photoinitiators. This composite approach allows the polymer to maintain its semiconducting properties while the crosslinker prevents gelling by forming a stable network structure, and the photoinitiator enables UV patterning, thereby improving reproducibility and eliminating gelling issues.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent modifies the chemical structure parameters of the OSC polymer by using DPP-fused thiophene with specific side chain configurations. This structural parameter change, combined with adding crosslinking functionality, transforms the material from one that gels to one that forms stable, reproducible films with controlled crosslinking density.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If high-temperature and high-vacuum deposition processes are used, then conventional silicon-based transistors can be manufactured, but the process complexity increases

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoiddeposition process complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent replaces the mechanical/physical vapor deposition process (high-temperature, high-vacuum) with a chemical solution-based process. The OSC polymer is dissolved in solvent and deposited via spin-coating or similar techniques at low temperatures and atmospheric pressure, then crosslinked by UV irradiation. This substitution dramatically simplifies the manufacturing process while maintaining device functionality.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent utilizes phase transition from liquid solution to solid film through solvent evaporation, followed by chemical crosslinking phase transition. This two-stage process replaces the single-step high-temperature deposition, enabling low-temperature fabrication while achieving stable, crosslinked semiconductor layers.

Inventive Principle:
Principle #36Phase transitions

3Manufacturing precision

If photolithographic patterning is used on conjugated organic materials, then patterns can be formed, but the conjugation is damaged

Engineering Contradiction:
Improvepatterning precisionVSAvoidconjugation integrity
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent applies preliminary crosslinking to the OSC polymer before photolithographic patterning. The crosslinked network structure protects the conjugated backbone from damage during subsequent photolithography steps, maintaining both patterning precision and conjugation integrity simultaneously.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The composite material system of crosslinked OSC polymer with photoinitiator enables a different patterning mechanism. Instead of using photolithography that damages conjugation, the patent uses UV-induced crosslinking through the photoinitiator to create patterned regions. This chemical patterning approach maintains conjugation while achieving precise patterns.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances the solubility and processing of OSC layers, reducing gelling issues and improving reproducibility, while allowing for efficient UV patterning that maintains the effective conjugation of the polymer backbone, leading to better OTFT device performance and stability.

Implementation Method 1

UV patternable organic semiconductor (OSC) polymer blends

Methodology Applied
Scientific EffectPhotopolymerisation: Photopolymerisation

Data Source

PatentUS20240334806A1UV patternable polymer blends for organic thin-film transistors
Publication Date: 2024.10.03 CORNING INC
  • US20240334806A1 patent drawing
  • US20240334806A1 patent drawing
  • US20240334806A1 patent drawing

AI summary

A cross-bred organic semiconductor (OSC) polymer, includes a diketopyrrolopyrrole (DPP)-fused thiophene polymeric material, such that: the DPP-fused thiophene polymeric material comprises a first linear alkyl-substituted DPP portion and a second branched alkyl-substituted DPP portion, the cross-bred OSC polymer comprises a repeat unit having both the first linear alkyl-substituted DPP portion and the second branched alkyl-substituted DPP portion, and the fused thiophene is beta-substituted.