Monolithic UV Photocathode Electron Beam Structure for Microscale Integration
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Solution Overview
Problem
Existing electron beam devices are large in size and lack efficient integration of semiconductor and vacuum tube technologies, limiting their application in microscopic scale systems.
Innovation Solution
A semiconductor ultraviolet light source (SULS) with a photocathode and an anode separated by a vacuum gap, utilizing a transition layer and control electrodes to generate and manipulate free electron beams for irradiation, allowing for compact integration and generation of light without electrical injection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional electron beam devices use separate vacuum tube and semiconductor components, then functional performance is maintained, but device size becomes large and integration is inefficient
Solution Approach 1:
The patent merges semiconductor ultraviolet light source technology with vacuum tube photocathode technology into a single integrated device structure. The semiconductor UV LED is positioned in direct contact with the photocathode, eliminating the need for separate components and complex alignment mechanisms, thereby reducing overall device volume while maintaining functional performance
Solution Approach 2:
The integrated device structure serves multiple functions simultaneously: the semiconductor UV LED generates ultraviolet photons, the photocathode converts photons to photoelectrons, and the combined structure acts as both a light source and electron beam generator. This multi-functionality reduces the number of separate components needed, decreasing device complexity
2Volume of moving object
If semiconductor ultraviolet light source is integrated directly with photocathode, then device size is reduced and integration is improved, but light extraction efficiency and photoelectron generation may be compromised
Solution Approach 1:
The patent introduces an optical coupling layer as an intermediary between the semiconductor UV LED and the photocathode. This layer has refractive index values intermediate between the LED and photocathode materials, serving as a mediator that improves optical coupling efficiency and enhances light extraction from the LED while maintaining compact integration
Solution Approach 2:
The patent optimizes the refractive index of the optical coupling layer to match the impedance between the semiconductor LED and photocathode. By carefully selecting and adjusting the refractive index parameter of the coupling layer, the system achieves maximum light extraction efficiency and photoelectron generation while maintaining a compact integrated structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the reduction of device size and facilitates microscopic integration of hybrid semiconductor and vacuum tube technologies, enabling light generation with a shorter peak emission wavelength than the SULS used for photoelectron generation.
Implementation Method 1
Photocathode technology is based on a photoelectric effect when an electron within some material absorbs the energy of a photon and acquires more energy than its binding energy and is able to leave the material
Implementation Method 2
Such transition layer may be a refraction index matching layer, a Bragg reflector, a layer with periodically modulated refraction index
Implementation Method 3
Free electrons generated in a vacuum can be manipulated by electric and magnetic fields to form a fine beam
Implementation Method 4
an anode separated from the photocathode by a vacuum gap
Data Source
AI summary
An electron beam device has a semiconductor ultraviolet light source (SULS), a photocathode attached to the SULS, a photocathode electrode attached to the photocathode, an anode having a first surface facing towards a first surface of the photocathode, and a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode. The separation layer is configured to create a gap between the first surface of the photocathode and the first surface of the anode. The SULS generates photoelectrons at the first surface of the photocathode that are transmitted via the gap to the anode. The SULS, the photocathode, the photocathode electrode, the anode, and the separation layer are configured together as a monolithic integrated element. An alternate electron beam device has a SULS spaced from the photocathode, an anode located between the SULS and the photocathode, a controlling electrode located between the anode and the photocathode, and a separation layer located to create a gap.