Integrated UV-Plasma Reaction Chamber for ALD Wafer Transfer Bottlenecks
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Solution Overview
Problem
Conventional Atomic Layer Deposition (ALD) and Atomic Layer Epitaxy (ALE) processes require separate UV-assisted and plasma-enhanced operations, leading to inefficiencies due to the need for transferring wafers between different equipment.
Innovation Solution
A UV-assisted and plasma-enhanced process method integrated into a single system, utilizing a 2-in-1 optoelectronic assisted process chamber with a UV light source and induction coil for simultaneous UV and plasma enhancement within a single chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If UV-assisted and plasma-enhanced operations are performed in separate equipment, then each process can be optimized independently, but wafer transfer between equipment is required which reduces productivity
Solution Approach 1:
The patent combines UV-assisted and plasma-enhanced operations into a single integrated reaction chamber. The chamber includes both a UV light source for UV-assisted atomic layer deposition/epitaxy and an induction coil for plasma enhancement, allowing both processes to occur simultaneously without wafer transfer, thereby resolving the contradiction between independent process optimization and productivity.
2Device complexity
If UV-assisted and plasma-enhanced operations are performed separately, then equipment complexity is reduced, but operational efficiency deteriorates due to multiple transfers
Solution Approach 1:
The reaction chamber is designed as a multi-functional device that can perform both UV-assisted and plasma-enhanced operations. The chamber includes a UV light source, an induction coil, gas delivery systems, and temperature control mechanisms that support both processing modes, eliminating the need for separate equipment while maintaining operational efficiency.
3Ease of operation
If separate equipment is used for UV-assisted and plasma-enhanced processes, then process control is simplified, but time loss increases due to wafer transfer
Solution Approach 1:
By merging UV-assisted and plasma-enhanced operations into a single chamber with integrated control systems, the patent eliminates wafer transfer time while maintaining simplified process control through unified management of UV and plasma parameters within one reaction environment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration enhances the efficiency of ALD/ALE processes by allowing both UV-assisted and plasma-enhanced functions to be performed without transferring wafers, thereby improving operational efficiency.
Implementation Method 1
providing a UV light source at a top end of the inner tube body for emitting an ultraviolet light into the first gas chamber
Implementation Method 2
providing an induction coil around the outer tube body for inductively generating an electric field by providing a time-varying magnetic flux to the outer tube
Data Source
AI summary
A UV-assisted and plasma-enhanced process method includes: providing a lower chamber and a reaction space defined therein; providing an upper cover, wherein the upper cover has a window and vent holes; sealing a chamber opening of the lower chamber with the upper cover to form a reaction chamber; providing an outer tube body and an inner tube body disposed in the outer tube body, the outer tube body covering the window and the vent holes, and the inner tube body connected to the window; providing a UV light source at a top end of the inner tube body; providing an induction coil around the outer tube body; inducing a first gas to a first gas chamber in the inner tube body and a second gas to the second gas chamber between the inner and outer tube bodies; and activating the UV light source and the induction coil optionally.