UV and Reducing Agent Treatment for Low-k Dielectric Repair
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Solution Overview
Problem
Low dielectric constant (low-k) materials in semiconductor processing are mechanically weak and prone to damage from plasma processes, leading to increased dielectric constant values and integration challenges, particularly in damascene processing, where carbon-containing low-k materials are susceptible to densification and chemical modification.
Innovation Solution
Exposure to a reducing agent and ultraviolet (UV) radiation to repair process-induced damage in carbon-containing low-k dielectric materials, effectively reducing metal oxides and organic residues while maintaining the low dielectric constant, thereby improving adhesion and integrity of subsequent layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If carbon-containing low-k materials are used to reduce dielectric constant, then the dielectric constant is reduced, but the mechanical strength and chemical stability deteriorate
Solution Approach 1:
The patent applies parameter changes by controlling the carbon content and distribution within the dielectric material to achieve the desired dielectric constant while maintaining mechanical strength. By adjusting the concentration and bonding configuration of carbon atoms, the material properties are optimized to balance electrical and mechanical requirements.
Solution Approach 2:
The patent employs composite materials by combining carbon-containing compounds with traditional dielectric materials to create a low-k dielectric layer that maintains both low dielectric constant and adequate mechanical strength. The composite structure allows the carbon-containing material to reduce the dielectric constant while the base material provides structural support.
2Manufacturing precision
If plasma processes are used for patterning and cleaning, then fabrication precision is improved, but the low-k material suffers from densification and chemical modification
Solution Approach 1:
The patent applies preliminary anti-action by performing protective treatments on the low-k dielectric material before plasma processing. This includes forming protective coatings or modifying the material structure in advance to prevent plasma-induced densification and chemical modification during subsequent patterning and cleaning operations.
Solution Approach 2:
The patent uses intermediary protective layers or coatings between the plasma process and the low-k dielectric material. These intermediary layers act as barriers that allow plasma to perform its patterning and cleaning functions while protecting the underlying sensitive low-k material from direct plasma exposure and its harmful effects.
3Shape
If CMP process is used for planarization, then surface flatness is improved, but carbon loss and water absorption occur leading to increased dielectric constant
Solution Approach 1:
The patent applies preliminary action by performing protective measures on the low-k dielectric material before the CMP process. This includes forming protective coatings or pre-treating the material to prevent carbon loss and water absorption during mechanical polishing, thereby maintaining the low dielectric constant while achieving the required surface flatness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively recovers lost low-k properties and improves surface cleaning, ensuring minimal impact on the dielectric constant, enhancing the performance and integration of low-k materials in semiconductor devices.
Implementation Method 1
exposing the low-k dielectric layer to a reducing agent and ultraviolet (UV) radiation, for the repair of process-induced damage
Implementation Method 2
treatment with a reducing agent and ultraviolet (UV) radiation is effective to clean a processed wafer surface by removal (reduction) of metal oxide (e.g., copper oxide) and/or organic residue
Data Source
AI summary
Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.