UV Schottky Diode Detector with C-Axis Aligned Single Crystal Material
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Solution Overview
Problem
Existing UV detectors require bulk crystal growth and complex processing, which is time-intensive and prone to errors, and do not efficiently align the c-axis of the UV radiation detector material with the direction of detected UV light, affecting performance.
Innovation Solution
A method involving a single crystal UV radiation detector material with an amorphous support layer, such as silicon carbide, aligned perpendicular to the c-axis of the UV energy, eliminating the need for bulk crystal growth and improving detector performance by reducing recombination noise and enhancing IR filter throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bulk crystal growth method is used to produce CdS material, then UV detector can be formed, but the process is time-intensive and prone to errors
Solution Approach 1:
The patent changes the fundamental parameter of crystal growth method from bulk vapor phase growth to thin film deposition followed by laser-induced crystallization. This parameter change reduces fabrication time while maintaining detector performance by using a completely different physical process that operates on much shorter timescales.
Solution Approach 2:
The patent replaces the thermal field-based bulk crystal growth mechanism with a laser-induced localized melting and rapid crystallization mechanism. This substitution enables faster processing by using concentrated energy delivery to achieve crystallization in seconds rather than hours or days.
2Reliability
If bulk crystal growth method is used, then UV detector material is produced, but complex processing steps are required including slicing, annealing, polishing and etching
Solution Approach 1:
The patent extracts and eliminates the unnecessary intermediate processing steps (slicing, polishing, etching) by growing the crystal structure directly in the desired thin film form on the substrate. Only the essential steps of deposition and laser crystallization remain, dramatically simplifying the overall process.
Solution Approach 2:
The patent segments the complex bulk crystal growth process into two distinct, simplified stages: (1) thin film deposition establishing the material layer, and (2) laser-induced crystallization establishing the crystal structure. This segmentation allows each stage to be optimized independently and eliminates the need for intermediate mechanical processing steps.
3Adaptability or versatility
If CdS is glued to infrared filter surface, then dual band UV and IR detector is formed, but misalignment of c-axis with UV light direction occurs affecting performance
Solution Approach 1:
The patent merges the UV detector layer formation with the substrate preparation process by directly depositing and crystallizing CdS on the infrared filter substrate. This integration ensures that the c-axis orientation is established during the deposition process itself, guaranteeing proper alignment with the UV light detection direction while maintaining dual-band functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces recombination noise, improves UV detector performance, and increases quantum efficiency by aligning the c-axis of the UV radiation detector material with the detected UV energy, eliminating the need for bulk crystal growth and simplifying the fabrication process.
Implementation Method 1
a single crystal UV radiation detector material... for detecting ultraviolet energy
Implementation Method 2
an amorphous support layer disposed directly on the single crystal UV radiation detector material with the single crystal UV radiation detector material having a c-axis aligned along a direction of the ultraviolet energy being detected
Data Source
AI summary
A radiation detector for detecting ultraviolet energy having a single crystal UV radiation detector material and an amorphous support layer disposed directly on the single crystal UV radiation detector material with the single crystal UV radiation detector material having a c-axis aligned along a direction of the ultraviolet energy being detected.