UV Semiconductor Structure With Recessed Inactive Region Protection
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Solution Overview
Problem
Semiconductor devices, particularly those emitting ultraviolet light, face issues with reduced optical output due to oxidation and moisture sensitivity, leading to reliability and current dispersion problems.
Innovation Solution
A semiconductor device design featuring a light emitting structure with a concave part and recesses that separate the active and inactive regions, enhancing heat dissipation and current dispersion, while protecting the active layer from oxidation by isolating it from external moisture and contaminants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the active layer is exposed to external environment, then manufacturing process is simplified, but oxidation and moisture ingress reduce optical output and reliability
Solution Approach 1:
The patent divides the semiconductor device structure into distinct regions: an active region containing the light-emitting active layer, and an inactive region that is intentionally exposed to the external environment. The inactive region acts as a sacrificial zone that undergoes oxidation first, protecting the active region from environmental damage. This segmentation allows the active layer to be functionally isolated while simplifying the overall manufacturing process.
Solution Approach 2:
The inactive region serves as an intermediary protective barrier between the external environment and the active layer. By allowing the inactive region to oxidize and form a protective layer, it mediates the interaction between the environment and the sensitive active layer, preventing direct contact and oxidation of the active layer while maintaining structural integrity.
2Temperature
If heat dissipation structure is added, then thermal management is improved, but device complexity increases
Solution Approach 1:
The inactive region performs multiple functions simultaneously: it serves as a heat dissipation pathway by being thermally coupled to the substrate, acts as a protective barrier against oxidation, and provides structural support. By making the inactive region multi-functional, the patent improves heat dissipation without adding separate complex thermal management structures.
Solution Approach 2:
The patent merges the protective function and heat dissipation function into a single structural element (the inactive region). Instead of adding separate protective coatings and thermal management structures, the inactive region is designed to fulfill both roles, thereby improving heat dissipation while minimizing increases in device complexity.
3Illumination intensity
If current dispersion is improved, then light emission uniformity is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies different properties to different regions: the inactive region has properties optimized for environmental protection and heat dissipation, while the active region has properties optimized for light emission and current dispersion. By allowing different regions to have different qualities and functions, the patent achieves uniform light emission without requiring extremely high manufacturing precision across the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves the reliability and optical output of semiconductor devices by maintaining the active layer's integrity and enhancing heat dissipation, specifically for ultraviolet light emission, while reducing the impact of oxidation and moisture exposure.
Implementation Method 1
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer
Data Source
AI summary
Disclosed in an embodiment is a semiconductor device comprising: a substrate; a light emitting structure including a first conductive semiconductor layer and a second conductive semiconductor layer, which are arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, a concave part that is concave on the second conductive semiconductor layer toward the first conductive semiconductor layer, and a recess; a first electrode arranged on the concave part and electrically connected to the first conductive semiconductor layer; a second electrode arranged on the light emitting structure and electrically connected to the second conductive semiconductor layer; a first pad arranged on the first electrode; and a second pad arranged on the second electrode, wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, and the first pad vertically overlaps the concave part, the second conductive semiconductor layer on the inactive region, and the recess.