UV Sensor Floating Gate Segmentation for Sensitivity and Power

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Solution Overview

Problem

Current UV radiation sensors lack high sensitivity and are often costly and energy-intensive, necessitating a solution that enhances sensitivity while reducing manufacturing costs and power consumption.

Innovation Solution

The UV radiation sensor design features a floating gate with a thick dielectric layer and a 'grilled' shape, along with sequences of photodiodes, and uses independently biased tunneling and control gates to achieve high sensitivity and low energy consumption, eliminating the need for high-voltage CMOS components and reducing production costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional UV radiation sensors are used, then manufacturing cost and power consumption are reduced, but sensitivity is insufficient

Engineering Contradiction:
ImprovesensitivityVSAvoidpower consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The floating gate is divided into multiple segments with different dielectric layer thicknesses, creating multiple sensing regions that can be independently optimized for sensitivity while maintaining low power consumption through selective activation

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different portions of the floating gate have different dielectric layer thicknesses (thick dielectric layer in certain portions, thin dielectric layer in other portions), allowing local optimization of sensitivity in specific regions while maintaining overall low power consumption

Inventive Principle:
Principle #3Local quality

2Measurement precision

If conventional UV radiation sensors are used, then manufacturing cost is reduced, but sensitivity is insufficient

Engineering Contradiction:
ImprovesensitivityVSAvoidmanufacturing cost
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The patent changes the dielectric layer thickness parameter in specific portions of the floating gate to enhance sensitivity, while using standard CMOS manufacturing processes to keep manufacturing costs low

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The floating gate structure combines different dielectric materials with different thicknesses to create a composite structure that achieves high sensitivity while remaining compatible with standard CMOS manufacturing processes

Inventive Principle:
Principle #40Composite materials

3Measurement precision

If high-voltage CMOS components are used, then sensing capability is improved, but device complexity and manufacturing cost increase

Engineering Contradiction:
Improvesensing capabilityVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts the high-voltage requirement from the overall device by using independently biased tunneling and control gates that operate at lower voltages, eliminating the need for high-voltage CMOS components while maintaining sensing capability

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces independently biased tunneling and control gates as intermediary elements that mediate between the UV radiation detection and the readout circuit, allowing the main sensing structure to operate at low voltages without requiring high-voltage CMOS components

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The sensor achieves high sensitivity to UV radiation with low power consumption and manufacturing costs, facilitating precise charge injection and reducing complexity, making it suitable for various applications.

Implementation Method 1

sequences of photodiodes

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

thick dielectric layer below a certain portion of the floating gate

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11698299B2Ultraviolet radiation sensor
Publication Date: 2023.07.11 TOWER SEMICONDUCTOR LTD
  • US11698299B2 patent drawing
  • US11698299B2 patent drawing
  • US11698299B2 patent drawing

AI summary

A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.