Ultraviolet Sensor Thin Film Metallic Glass Schottky Barrier
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Ultraviolet sensors using wide band gap semiconductors suffer from low signal-to-noise ratio and long response time due to excessive dark current, which limits their effectiveness in various applications.
Innovation Solution
An ultraviolet sensor design incorporating a thin film metallic glass with a Schottky barrier junction formed between the semiconductor structure and the thin film metallic glass, which inhibits dark current and enhances the signal-to-noise ratio, achieved through a manufacturing process involving a glass substrate, semiconductor seed layer, electrode layer, and semiconductor nanostructures, with the thin film metallic glass being subjected to an annealing process for amorphization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a wide band gap semiconductor is used as the ultraviolet sensor, then the visible light response is improved and quantum conversion efficiency is enhanced, but the signal-to-noise ratio deteriorates and response time increases due to excessive dark current
Solution Approach 1:
A thin film metallic glass layer is introduced as an intermediary between the glass substrate and the zinc oxide semiconductor layer. This metallic glass layer forms a Schottky barrier junction with the semiconductor, acting as a mediator that suppresses dark current while preserving the high quantum conversion efficiency of the wide band gap semiconductor material.
Solution Approach 2:
The patent creates a composite structure combining metallic glass and zinc oxide semiconductor materials. The metallic glass component (amorphous alloy) is deposited on the glass substrate, followed by the zinc oxide semiconductor layer, forming a composite material system that leverages the advantages of both materials: the metallic glass provides dark current suppression while the zinc oxide maintains high UV sensitivity and quantum efficiency.
2Reliability
If a wide band gap semiconductor is used as the ultraviolet sensor, then the stability and photocurrent gain are improved, but the response time deteriorates due to excessive dark current
Solution Approach 1:
The thin film metallic glass serves as an intermediary layer that forms a Schottky barrier junction with the zinc oxide semiconductor. This junction acts as a mediator that reduces dark current flow, thereby decreasing the time required for the sensor to respond to UV light signals while maintaining the stability provided by the wide band gap semiconductor.
3Device complexity
If no external optical filter is used, then the device complexity is reduced and manufacturing is simplified, but the dark current increases and signal-to-noise ratio deteriorates
Solution Approach 1:
The thin film metallic glass layer acts as an intermediary that provides inherent optical filtering functionality through the Schottky barrier junction it forms with the semiconductor. This eliminates the need for separate external optical filters, maintaining device simplicity while achieving effective dark current suppression and improved signal-to-noise ratio.
Solution Approach 2:
The metallic glass layer performs multiple functions simultaneously: it serves as an adhesion layer between the glass substrate and semiconductor, forms a Schottky barrier junction for dark current suppression, and provides optical filtering characteristics. This multi-functionality eliminates the need for separate components, reducing device complexity while improving performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of thin film metallic glass significantly reduces dark current and increases the signal-to-noise ratio, improving the overall performance of ultraviolet sensors by forming a Schottky barrier junction, as demonstrated by experimental data showing enhanced photocurrent, reduced response time, and improved recovery times.
Implementation Method 1
an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio
Implementation Method 2
the thin film metallic glass is subject to an annealing process to promote amorphization of the thin film metallic glass
Implementation Method 3
The operation principle of ultraviolet sensors is to convert the received ultraviolet light into electrical signals by photosensitive material
Data Source
AI summary
An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.