Colored UV Shielding Layer for Oxide Semiconductor Transistors

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Solution Overview

Problem

Transistors made from oxide semiconductor materials are vulnerable to damage from ultraviolet light exposure during photolithography, leading to defects, instability, and reduced reliability due to the creation of oxygen vacancy states and photogenerated holes.

Innovation Solution

A colored light shielding layer is applied over the semiconductor layer to reduce exposure to ultraviolet radiation, thereby minimizing damage and defects. This layer is made from materials such as metal oxides, p-type oxide semiconductors, or perovskites, which provide high chemical and physical resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography process is used to manufacture transistors, then manufacturing precision and productivity are improved, but ultraviolet light exposure causes oxygen vacancy states and photogenerated holes in oxide semiconductor layers, worsening reliability and stability

Engineering Contradiction:

Improvepattern formation precisionVSAvoidtransistor reliability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

A colored light shielding layer is introduced as an intermediary between the ultraviolet light source and the oxide semiconductor layer. This layer selectively blocks harmful UV wavelengths while allowing the photolithography process to proceed, thus protecting the semiconductor from damage without compromising manufacturing precision

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent converts the harmful effect of ultraviolet light into a beneficial filtering process by using the colored light shielding layer to selectively absorb UV wavelengths. The layer transforms the potentially damaging radiation into a protected environment, allowing photolithography to proceed safely

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If oxide semiconductor materials are used, then transistor performance is improved, but the materials are vulnerable to ultraviolet light damage, worsening stability

Engineering Contradiction:

Improvetransistor performanceVSAvoidsemiconductor layer stability

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

The colored light shielding layer is applied in advance before photolithography exposure to prevent ultraviolet light from reaching the oxide semiconductor layer. This preliminary protective action prevents the formation of oxygen vacancy states and photogenerated holes before they can occur

Inventive Principle:

Principle #9Preliminary anti-action

Solution Approach 2:

The shielding layer acts as a protective intermediary that selectively filters UV radiation while allowing the oxide semiconductor to maintain its high-performance characteristics. The layer preserves the semiconductor's composition stability without compromising device performance

Inventive Principle:

Principle #24Intermediary (Mediator)

3Device complexity

If no light shielding layer is used, then device complexity is reduced, but semiconductor layers suffer from UV-induced defects, worsening manufacturing precision

Engineering Contradiction:

Improvestructure complexityVSAvoiddefect generation

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The colored light shielding layer is deposited as a preliminary step in the manufacturing process, forming a protective barrier before photolithography. This preliminary action prevents defect generation without significantly increasing overall device complexity

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The shielding layer is implemented as a thin film structure that provides effective UV protection while minimizing added complexity. The thin film approach maintains device simplicity while preventing manufacturing defects

Inventive Principle:

Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The implementation of the colored light shielding layer significantly reduces the generation of defects and instability in the semiconductor layer, enhancing the reliability and performance of the transistor by minimizing exposure to UV light and reducing oxygen vacancy states and photogenerated holes.

Implementation Method 1

A colored light shielding layer is applied over the semiconductor layer to reduce exposure to ultraviolet radiation

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Data Source

PatentUS20250038124A1Methods and Structure for Shielding Semiconductors From Ultraviolet Light

Publication Date: 2025.01.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A transistor comprises a colored light shielding layer over the semiconductor layer thereof. The colored light shielding layer reduces exposure of the semiconductor layer to radiation having a wavelength of about 10 nanometers (nm) to about 400 nm. The colored light shielding layer may have a white, black, red, yellow, or gray color. The colored light shielding layer can be formed from a metal oxide film, a p-type oxide semiconductor, or a perovskite. The colored light shielding layer reduces defects that may be generated in the semiconductor layer due to UV light exposure during the manufacturing process, improving device performance and reliability.