UV Shutter for Semiconductor Substrate Warpage Control
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Solution Overview
Problem
The variation in warpage of semiconductor substrates in the in-plane direction cannot be effectively improved by simply forming a silicon nitride film on the back surface, leading to uneven stress distribution and deformation.
Innovation Solution
A semiconductor manufacturing apparatus with a shutter system that includes movable parts allowing for independent UV light irradiation and blocking, enabling localized adjustment of stress on the silicon nitride film to reduce warpage variation by positioning UV irradiation areas and non-irradiation areas based on measured warpage differences in the X-axis and Y-axis directions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a silicon nitride film is formed on the back surface of the semiconductor substrate, then warpage of the semiconductor substrate is reduced, but variation in warpage in the in-plane direction cannot be effectively improved
Solution Approach 1:
The patent applies local quality by selectively irradiating UV light to specific regions (first and second regions) of the silicon nitride film on the back surface of the semiconductor substrate. This creates localized stress adjustments in different areas to compensate for measured warpage variations, rather than applying uniform treatment across the entire substrate.
Solution Approach 2:
The patent changes the physical-chemical parameters of the silicon nitride film by irradiating it with UV light. The UV irradiation modifies the stress state of the film in different regions, allowing precise control over the stress distribution to reduce in-plane warpage variation.
2Stability of the object's composition
If UV light is uniformly irradiated across the entire back surface, then stress is distributed evenly, but it cannot reduce variation in warpage in the in-plane direction
Solution Approach 1:
The patent divides the back surface into multiple regions (first region and second region) and applies UV irradiation selectively to specific regions based on measured warpage characteristics. This localized approach allows different stress conditions to be applied to different areas, enabling correction of in-plane warpage variation.
Solution Approach 2:
The patent segments the UV irradiation process into distinct regions (first and second regions) that can be independently controlled. The shutter mechanism allows selective exposure of different regions, enabling segmented stress adjustment across the substrate back surface.
3Ease of manufacture
If the entire back surface is irradiated with UV light, then processing is simple, but it cannot minimize differences in warpage between specific directions
Solution Approach 1:
The patent implements local quality control by measuring warpage in different directions (first and second directions) and selectively irradiating UV light to specific regions that require stress adjustment. This targeted approach maintains manufacturing feasibility while achieving precise directional warpage control.
Solution Approach 2:
The patent employs a feedback mechanism where warpage is measured in different directions, and UV irradiation is selectively applied to regions that require correction. The process uses measurement results to guide subsequent processing steps, enabling iterative refinement of flatness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the variation in warpage by locally adjusting the stress on the semiconductor substrate, minimizing differences in warpage between the X-axis and Y-axis directions, thereby improving substrate flatness and reducing deformation.
Implementation Method 1
at least one UV lamp provided at a position facing a surface of a semiconductor substrate which is to be irradiated with UV light
Implementation Method 2
a shutter disposed between the surface of the semiconductor substrate and the at least one UV lamp and which is capable of blocking UV light emitted by the UV lamp
Data Source
AI summary
A semiconductor manufacturing apparatus includes at least one UV lamp provided at a position facing a surface of a semiconductor substrate arranged to irradiate the surface of the semiconductor substrate with UV light, and a shutter disposed between the surface of the semiconductor substrate and the at least one UV lamp and configured to block UV light emitted by the UV lamp. The shutter includes a first movable part movable in a first direction being an in-plane direction parallel to the semiconductor substrate, and a second movable part movable in a second direction being an in-plane direction perpendicular to the first direction, the second movable part being movable independently of the first movable part.