UVC Light Emitting Element With SiO2/SiN Moisture Barrier
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Solution Overview
Problem
UVC light emitting elements for water and air sterilization face challenges with moisture resistance and heat dissipation, leading to defects in electric properties and reduced lifespan due to the use of SiO2 protective films, which are not suitable for high-humidity environments and result in low light emission efficiency and excessive heat generation.
Innovation Solution
A light emitting element with a laminated protective film structure comprising SiO2 and SiN, which improves moisture resistance, heat dissipation, and insulation properties, while reducing film stress, thereby enhancing the reliability and performance of UVC light emitting elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If SiO2 is used as a protective film for UVC light emitting elements, then the element structure is simple and easy to manufacture, but the moisture resistance deteriorates leading to defects in electric properties
Solution Approach 1:
The patent applies composite materials by combining SiO2 and SiN layers to form a laminated protective film structure. This composite structure leverages the low refractive index and good adhesion of SiO2 combined with the high density and excellent moisture barrier properties of SiN, achieving both ease of manufacture and superior moisture resistance that prevents electric property defects in UVC light emitting elements.
Solution Approach 2:
The patent implements the nesting principle by creating a multi-layered protective film structure where SiO2 and SiN layers are laminated together. Each layer is nested within the protective film system, with SiO2 providing the outer protective layer and SiN providing the inner moisture barrier layer, thereby achieving enhanced reliability while maintaining manufacturing simplicity.
2Ease of manufacture
If SiO2 is used as a protective film, then the manufacturing process is simple, but heat dissipation capability deteriorates resulting in excessive heat generation and reduced lifespan
Solution Approach 1:
The patent uses composite materials by combining SiO2 and SiN in a laminated structure. SiN has superior thermal conductivity compared to SiO2, so the inclusion of SiN layers in the protective film enhances heat dissipation capability while maintaining the simplicity of the manufacturing process through standard deposition techniques.
3Device complexity
If SiO2 is used as a protective film, then the structure is simple, but insulation property deteriorates affecting element reliability
Solution Approach 1:
The patent applies composite materials by laminating SiO2 and SiN layers together. SiN possesses excellent electrical insulation properties, and by incorporating it into the protective film structure, the overall insulation property is enhanced while maintaining a relatively simple two-layer structure that does not significantly increase device complexity.
4Use of energy by moving object
If p-AlGaN is used as a p-type contact layer for UVC emission, then light extraction efficiency is improved, but moisture resistance deteriorates as AlGaN is not resistant to moisture
Solution Approach 1:
The patent applies the intermediary principle by introducing a SiN layer as a protective barrier between the moisture environment and the p-AlGaN contact layer. This intermediary layer prevents moisture from reaching and degrading the AlGaN, thereby maintaining the moisture resistance of the device while preserving the high light extraction efficiency provided by the p-AlGaN layer.
Solution Approach 2:
The patent uses composite materials in the protective film structure combining SiO2 and SiN layers. The SiN layer specifically addresses the moisture resistance issue of p-AlGaN by providing a dense barrier, while the composite structure maintains the optical properties needed for efficient light extraction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminated SiO2/SiN protective film structure significantly improves moisture resistance, heat dissipation, and insulation, ensuring the reliability and extended lifespan of UVC light emitting elements, particularly in high-humidity environments, by reducing defects and enhancing light extraction efficiency.
Implementation Method 1
SiN is of high density and has less defects in comparison with SiO2, so that a moisture proof property of the protective film can be improved
Implementation Method 2
SiN has a thermal conductivity higher than that of SiO2, and thus a heat dissipation property of the protective film can be improved
Implementation Method 3
due to the laminated structure, SiO2 and SiN act to cancel a film stress, so that reduction of the film stress can be achieved
Data Source
AI summary
A light emitting element having an emission wavelength of 200 to 280 nm and including a group-III nitride semiconductor containing Al. The element includes a p-electrode provided on the p-type layer in contact therewith, including a Ru layer, an n-electrode provided on the n-type layer exposed at a bottom of a hole, and a protective film covering an entire upper surface of the element and including a first protective film made of SiO2 and a second protective film made of SiN which are laminated in sequence.