UWBG Optically Addressable Light Valves for High-Power Lasers

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Solution Overview

Problem

Existing optically addressable light valves (OALVs) face limitations in handling high-power laser beams due to low laser-induced damage thresholds, leading to potential damage and reduced operational lifetime.

Innovation Solution

Incorporation of ultra-wide band gap (UWBG) semiconductors such as Ga2O3, AlN, BN, and diamond, along with monolithic structures and advanced thermal management systems like heat sinks and cooling mechanisms, to enhance the laser-induced damage threshold and thermal stability of OALVs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional photoconductors with narrow band gap are used, then the device can operate with lower power lasers, but the laser-induced damage threshold is low leading to potential damage and reduced operational lifetime

Engineering Contradiction:

Improveoperational lifetimeVSAvoidlaser-induced damage

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the fundamental parameter of the photoconductor material by using ultra-wide band gap semiconductors (band gap ≥ 3.5 eV) instead of conventional narrow band gap materials. This parameter change increases the laser-induced damage threshold and enables the device to handle high-power lasers without damage, directly resolving the contradiction between reliability and damage resistance

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures combining ultra-wide band gap semiconductors with liquid crystal and transparent conductors in a layered configuration. This composite approach leverages the high damage threshold of UWBG materials while maintaining the functional properties of the overall device, achieving both high power handling and operational reliability

Inventive Principle:

Principle #40Composite materials

2Productivity

If higher power laser beams are used to increase processing capability, then productivity improves, but the low damage threshold of conventional materials causes damage and reduces device lifetime

Engineering Contradiction:

Improveprocessing capabilityVSAvoiddevice lifetime

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

By changing the band gap parameter of the photoconductor material to ultra-wide (≥ 3.5 eV), the device can safely operate with high-power laser beams without suffering damage. This parameter change enables the system to achieve high productivity through high-power laser processing while maintaining device lifetime and reliability

Inventive Principle:

Principle #35Parameter changes

3Temperature

If conventional photoconductors are used, then the device structure is simpler, but the thermal stability is insufficient for high-power laser operation

Engineering Contradiction:

Improvethermal stabilityVSAvoiddevice structure

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The patent changes the material parameter of the photoconductor to ultra-wide band gap semiconductor, which inherently possesses superior thermal stability. This material parameter change enables the device to withstand high temperatures and thermal loads from high-power laser operation without requiring complex additional thermal management structures

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of UWBG semiconductors and thermal management systems significantly increases the OALVs' ability to handle high-power lasers, reducing damage and extending operational lifetime, enabling applications in high-power laser systems and additive manufacturing.

Implementation Method 1

The conductivity of the photoconductor is controlled with a control beam of light having a first wavelength, which generates charge carriers within the photoconductor material

Methodology Applied

Scientific EffectPhotoconductivity: Photoconductivity

Implementation Method 2

This increase in voltage across the liquid crystal actuates the liquid crystal. At the same time, an input beam of light from a laser or other light source that is to be spatially modulated or shaped is incident on the OALV

Methodology Applied

Scientific EffectElectro-optic effect: Electro-Optic Effects

Data Source

PatentUS12523902B2Optically addressable light valves for high power operation

Publication Date: 2026.01.13 LAWRENCE LIVERMORE NAT SECURITY LLC

AI summary

An optically addressable light valve comprises a first transparent conductor layer, a layer of liquid crystal, and a photoconductor comprising an ultrawide band gap (UWBG) semiconductor. The liquid crystal is between the first transparent conductor layer and the semiconductor photoconductor. The optically addressable light valve is configured to apply a voltage across the liquid crystal and the UWBG semiconductor. A second transparent conductor may be formed in the UWBG semiconductor in some configurations, and the voltage may be applied across the first and second transparent conductor.