V-Groove Multi-Wavelength LED Structure for Wavelength Control
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Solution Overview
Problem
Existing LEDs can only emit single-wavelength light, limiting their application in display technology where longer life, higher image quality, and higher definition are required.
Innovation Solution
A multi-wavelength LED structure is achieved by incorporating a stress releasing layer, V-shaped grooves, and a multi-quantum well layer with varying material compositions and depths, allowing carriers to be injected into potential well layers from the sidewalls of V-shaped grooves, thereby controlling the light emitting wavelength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional LED structure is used, then the manufacturing process is simple, but the LED can only emit single-wavelength light, limiting display quality and definition
Solution Approach 1:
The active region is segmented into multiple quantum well layers with different material compositions and thicknesses, each emitting at different wavelengths. The V-shaped grooves further segment the structure to create distinct light emission zones, enabling multi-wavelength emission from a single LED device.
Solution Approach 2:
Different regions of the LED structure are assigned different material compositions and structural properties. The quantum well layers have varying Indium/Gallium ratios to emit different wavelengths, and the V-shaped grooves create localized regions with different stress states and carrier injection characteristics, enabling spatially differentiated light emission.
2Manufacturing precision
If the multi-quantum well layer is grown to conformally cover the V-shaped layer surface, then the light emitting wavelength can be controlled, but the manufacturing precision requirements increase
Solution Approach 1:
The V-shaped grooves are formed in advance on the V-shaped layer before growing the multi-quantum well layer. This preliminary structuring allows the subsequent quantum well layers to conformally follow the pre-defined groove patterns, ensuring precise wavelength control without requiring complex real-time growth adjustments.
Solution Approach 2:
The material composition parameters of the quantum well layers are precisely controlled during growth, with varying Indium and Gallium concentrations to achieve different bandgaps and emission wavelengths. The growth temperature and rate are also optimized to ensure conformal coverage and precise compositional control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the realization of a multi-wavelength LED structure, enhancing light emitting capabilities and potentially improving luminous efficiency and display quality.
Implementation Method 1
V-shaped grooves are formed on a surface of the V-shaped layer under control of the stress releasing layer
Implementation Method 2
Light emitting diode, or LED for short, uses recombination of electrons and grooves to emit visible light
Data Source
AI summary
The present disclosure provides an LED structure and a preparation method thereof. The LED structure includes: a first conductivity semiconductor layer; a stress releasing layer disposed on the first conductivity semiconductor layer, and a material of the stress releasing layer is a III-V group semiconductor material; a V-shaped layer disposed on the stress releasing layer and having V-shaped grooves, where the V-shaped grooves are formed under a control of the stress releasing layer; a multi-quantum well layer, configured to conformally cover a surface of the V-shaped layer away from the stress releasing layer; a second conductivity semiconductor layer disposed on a side of the multi-quantum well layer away from the first conductivity semiconductor layer, where a conductivity type of the second conductivity semiconductor layer is different from that of the first conductivity semiconductor layer.