Semiconductor device with filling layer and method for fabricating the same
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Solution Overview
Problem
Semiconductor devices face challenges in scaling down while maintaining quality, yield, performance, and reliability, particularly due to increased complexity and resistance in conductive structures.
Innovation Solution
A semiconductor device design featuring a conductive concave layer with a V-shaped cross-sectional profile and a conductive filling layer made of germanium or silicon germanium, which reduces resistance and improves performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional conductive structures are used in scaled-down semiconductor devices, then device complexity is reduced, but resistance increases and performance deteriorates
Solution Approach 1:
The patent employs a composite conductive structure consisting of a conductive concave layer (first conductive material) and a conductive filling layer (second conductive material with higher conductivity). This multi-material approach reduces overall resistance while maintaining manageable structural complexity through systematic layering and integration into the semiconductor device architecture.
2Productivity
If device size is continuously decreased to meet computing demand, then computing power increases, but resistance in conductive structures increases and quality/yield/reliability suffer
Solution Approach 1:
The patent changes the material parameters of the conductive structure by introducing a second conductive material with higher conductivity than the first. This parameter change (material composition and conductivity) directly addresses the resistance increase problem caused by scaling, enabling continued productivity improvement while maintaining reliability through enhanced electrical performance.
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure including a conductive concave layer disposed on the substrate and a conductive filling layer disposed on the conductive concave layer, wherein the conductive concave layer includes a top surface having a V-shaped cross-sectional profile; and a top conductive layer disposed on the conductive structure. The conductive filling layer includes germanium or silicon germanium.